InAs quantum-dot GaAs-based lasers grown on AlGaAsSb metamorphic buffers

Yang, Xin; Vaughn, Leslie G.; Dawson, L. R.; Stintz, A.; Lin, Yong; Lester, L. F.; Huffaker, Diana L.

doi:10.1063/1.1582229

Cited by 74 publications

(43 citation statements)

References 9 publications

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“…However, optoelectronics and the implementation of practical quantum computation networks require mostly the use of QDs emitting in the telecommunications C-band (1.53 -1.56 µm). Emission at wavelengths around 1.55 µm has already been achieved from QDs grown on a GaAs substrate by means of different techniques, for instance by unusually low temperature growth [4] or epitaxial growth on metamorphic buffer layers [5,6]. Yet, one of the most attractive material combinations for fabricating QDs emitting in the C-band is InAs on InP substrate.…”

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confidence: 99%

Time-resolved characterization of InAsP∕InP quantum dots emitting in the C-band telecommunication window

Hostein

Michon

Beaudoin

et al. 2008

Applied Physics Letters

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The dynamic response of InAsP quantum dots grown on InP(001) substrates by low-pressure Metalorganic Vapor Phase Epitaxy emitting around 1.55 µm, is investigated by means of timeresolved microphotoluminescence as a function of temperature. Exciton lifetime steadily increases from 1 ns at low temperature to reach 4 ns at 300K while the integrated photoluminescence intensity decreases only by a factor of 2/3. These characteristics give evidence that such InAsP/InP quantum dots provide a strong carrier confinement even at room temperature and that their dynamic response is not affected by thermally activated non-radiative recombination up to room temperature.In recent years, self-assembled semiconductor quantum dots (QDs) have been considered for utilization in quantum information processing (such as quantum communication [1,2,3]), in addition to their conventional applications in optoelectronics, for example. However, optoelectronics and the implementation of practical quantum computation networks require mostly the use of QDs emitting in the telecommunications C-band (1.53 -1.56 µm). Emission at wavelengths around 1.55 µm has already been achieved from QDs grown on a GaAs substrate by means of different techniques, for instance by unusually low temperature growth [4] or epitaxial growth on metamorphic buffer layers [5,6]. Yet, one of the most attractive material combinations for fabricating QDs emitting in the C-band is InAs on InP substrate. Most of the studies, involving high-vacuum growth techniques such as molecular beam epitaxy, [7,8] of InAs QDs on (001)-oriented InP substrates, demonstrated the formation of strongly elongated nanostructures (namely, "quantum dashes" or "quantum sticks") rather than three-dimensional QDs. To circumvent this difficulty, a few groups have used (113)B-oriented InP substrates [9], which are however not compatible with the standard processes used in the fabrication of optoelectronic devices. Metalorganic vapor phase epitaxy (MOVPE) has also been used for the growth of InAs/InP(001) QDs. Various studies have shown that MOVPE allows one to obtain QDs rather than quantum dashes [10,11]. Recently, microphotoluminescence signals around 1.5 µm evidenced sharp spectral features corresponding to radiative transitions from trapped single electron-hole pairs in such InAs/InP QDs grown by MOVPE [13,14,15]. Conversely, not much work has been done on the dynamic response of such MOVPE-grown dots and its dependence as a function of the temperature [19]. Yet, measurements of this dynamic response and the impact of thermally activated non-radiative mechanisms are quite important to assess the potential of such QDs devices for example for high-speed direct modulation or efficient generation of quantum states of light at high temperature (more than 77 K). This study forms the basis of this letter. The dependence of the large measured radiative lifetime and the small decrease of the integrated intensity as a function of temperature demonstrate the high structural quality of these QDs, which offer ...

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confidence: 99%

Time-resolved characterization of InAsP∕InP quantum dots emitting in the C-band telecommunication window

Hostein

Michon

Beaudoin

et al. 2008

Applied Physics Letters

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“…Another route to extend the emission wavelength is the use of strain-engineered metamorphic In x Ga 1-x As confining layers (CLs) on GaAs, into which the InAs QDs are embedded [23][24][25]. Several groups have produced ∼1.5-μm-wavelength lasers by this method [26,27], and in a recent work, telecomswavelength single-photon emission was demonstrated, with encouraging results for the generation of entangled pairs of photons [28].…”

Section: Introductionmentioning

confidence: 99%

Exciton confinement in strain-engineered metamorphic InAs/ InxGa1–xAs quantum dots

et al. 2017

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We report a comprehensive study of exciton confinement in self-assembled InAs quantum dots (QDs) in strain-engineered metamorphic In x Ga 1-x As confining layers on GaAs using low-temperature magnetophotoluminescence. As the lattice mismatch (strain) between QDs and confining layers (CLs) increases from 4.8% to 5.7% the reduced mass of the exciton increases, but saturates at higher mismatches. At low QD-CL mismatch there is clear evidence of spillover of the exciton wave function due to small localization energies. This is suppressed as the In content x in the CLs decreases (mismatch and localization energy increasing). The combined effects of low effective mass and wave-function spillover at high x result in a diamagnetic shift coefficient that is an order of magnitude larger than for samples where In content in the barrier is low (mismatch is high and localization energy is large). Finally, an anomalously small measured Bohr radius in samples with the highest x is attributed to a combination of thermalization due to low localization energy, and its enhancement with magnetic field, a mechanism which results in small dots in the ensemble dominating the measured Bohr radius.

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“…How− ever, the high lattice mismatch between the GaSb epilayer and the GaAs substrate (7.8%) complicates the growth of sophisticated device structures. To overcome the problem of this large lattice mismatch, which can lead to a big amount of threading dislocations and high defect density, various buffer layers such as compositionally graded metamorphic buffers [9,10], low temperatures layers [11,12], and super− lattice layers [13] were proposed. Metamorphic buffers' layers have been demonstrated in the growth of AlGaAsSb on GaAs [9] to achieve mid−infrared detectors and lasers.…”

Section: Introductionmentioning

confidence: 99%

“…To overcome the problem of this large lattice mismatch, which can lead to a big amount of threading dislocations and high defect density, various buffer layers such as compositionally graded metamorphic buffers [9,10], low temperatures layers [11,12], and super− lattice layers [13] were proposed. Metamorphic buffers' layers have been demonstrated in the growth of AlGaAsSb on GaAs [9] to achieve mid−infrared detectors and lasers. However, in this approach, initially the strain within the crit− ical thickness is accommodated by a tetragonal distortion followed by defect formation and filtering, therefore, the necessity to grow thick buffer layers (often > 1 μm) is required.…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, metamorphic buffer layer approach ex− hibits several deficiencies such as the poor thermal and elec− trical conductivity, and the material degradation through the presence of threading dislocations. Recently, another tech− nology, interfacial misfit dislocation (IMF) growth mode was developed [14,15], where the strain is relieved instanta− neously at the mismatched heterointerface by the formation of a two−dimensional (2 D), periodic IMF arrays comprised of pure−edge (90°) dislocations along both [110] and [1][2][3][4][5][6][7][8][9][10] [14]. This growth mode offers a "buffer−free" approach with low threading dislocation density (~10 5 cm -2 ) [15].…”

Section: Introductionmentioning

confidence: 99%

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Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy

Benyahia

Kubiszyn

Michalczewski

et al. 2016

Opto-Electronics Review

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Non-intentionally doped GaSb epilayers were grown by molecular beam epitaxy (MBE) on highly mismatched semi-insulating GaAs substrate (001) with 2 offcut towards [110]. The effects of substrate temperature and the Sb/Ga flux ratio on the crystalline quality, surface morphology and electrical properties were investigated by Nomarski optical microscopy, X-ray diffraction (XRD) and Hall measurements, respectively. Besides, differential Hall was used to investigate the hole concentration behaviour along the GaSb epilayer. It is found that the crystal quality, electrical properties and surface morphology are markedly dependent on the growth temperature and the group V/III flux ratio. Under the optimized parameters, we demonstrate a low hole concentration at very low growth temperature. Unfortunately, the layers grown at low temperature are characterized by wide FWHM and low Hall mobility.

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InAs quantum-dot GaAs-based lasers grown on AlGaAsSb metamorphic buffers

Cited by 74 publications

References 9 publications

Time-resolved characterization of InAsP∕InP quantum dots emitting in the C-band telecommunication window

Time-resolved characterization of InAsP∕InP quantum dots emitting in the C-band telecommunication window

Exciton confinement in strain-engineered metamorphic InAs/ InxGa1–xAs quantum dots

Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy

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