InAs quantum boxes: Highly efficient radiative traps for light emitting devices on Si

Gérard, Jean‐Michel; Cabrol, O.; Sermage, B.

doi:10.1063/1.115798

Cited by 161 publications

(71 citation statements)

References 7 publications

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“…4 5 6 Moreover, the efficient charge carrier confinement in the QDs should strongly reduce their optical sensitivity to the presence of defects, and in particular to the dislocations of a shallowly buried DN. 7 So far, lateral organization of QDs mediated by an underlying DN has been reported for metals 8 and for Germanium on Silicon 9 but not for III-V materials.…”

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confidence: 99%

Buried dislocation networks designed to organize the growth of III-V semiconductor nanostructures

et al. 2004

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We first report a detailed transmission electron microscopy study of dislocation networks (DNs) formed at shallowly buried interfaces obtained by bonding two GaAs crystals between which we establish in a controlled manner a twist and a tilt around a <110> direction. For large enough twists, the DN consists of a two-dimensional network of screw dislocations accommodating mainly the twist and of a one-dimensional network of mixed dislocations accommodating mainly the tilt. We show that in addition the mixed dislocations accommodate part of the twist and we observe and explain slight unexpected disorientations of the screw dislocations with respect to the <110> directions. By performing a quantitative analysis of the whole DN, we propose a coherent interpretation of these observations which also provides data inaccessible by direct experiments. When the twist is small enough, one screw subnetwork vanishes. The surface strain field induced by such DNs has been used to pilot the lateral ordering of GaAs and InGaAs nanostructures during metalorganic vapor phase epitaxy. We prove that the dimensions and orientations of the nanostructures are correlated with those of the cells of the 2 underlying DN and explain how the interface dislocation structure governs the formation of the nanostructures. 61.72.Lk, 61.72.Mm, 68.37.Lp,

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confidence: 99%

Buried dislocation networks designed to organize the growth of III-V semiconductor nanostructures

et al. 2004

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“…Once the carriers have arrived in the active part of the lattice, the next problem is that of non-radiative recombination at one of the many etched interfaces. III}V semiconductors, particularly GaAs, su!er badly from surface recombination, with InGaAs/InP and quantum dot systems, as already mentioned, being the notable exception [98,101].…”

Section: 123mentioning

confidence: 99%

Photonic crystals in the optical regime â past, present and future

Krauss

Rue

1999

Progress in Quantum Electronics

443

141

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During the last decade, photonic crystals, also known as photonic microstructures or photonic bandgap structures, have matured from an intellectual curiosity concerning electromagnetic waves to a "eld with real applications in both the microwave and optical regime. In this review, we shall focus on progress and the prospects for semiconductor structures that mainly involve guided modes interacting with periodic structures, but we also evaluate alternative material systems and fabrication methods, e.g. those based on self-organisation. We shall go from basic concepts, via a discussion of the state of the art, to device applications. Naturally, the discussion of the applications will be more speculative, but we attempt to evaluate the real prospects o!ered by photonic crystals at optical frequencies while considering practical limitations. In doing so, we identify a variety of areas such as the combination of quantum dot light emitters with photonic crystals that seem particularly promising. We discuss the prospects for enhanced light}matter interactions in photonic crystals and the related material and design issues. Overall, the aim of this review is to introduce the reader to the concepts of photonic crystals, describe the state of the art and attempt to answer the question of what uses these peculiar structures may have.

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“…surface related nonradiative recombination centers [14], which attenuates the quenching of the carrier lifetime with temperature. The synthesis of quantum dots as nanodisks inserted in nanowires (NWs) offers an exciting alternative to avoid the inherent constraints of Stranski-Krastanov growth.…”

Section: Published By the American Physical Society Under The Terms Omentioning

confidence: 99%

Long-lived excitons in GaN/AlN nanowire heterostructures

et al. 2015

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GaN/AlN nanowire heterostructures can display photoluminescence (PL) decay times on the order of microseconds that persist up to room temperature. Doping the GaN nanodisk insertions with Ge can reduce these PL decay times by two orders of magnitude. These phenomena are explained by the three-dimensional electric field distribution within the GaN nanodisks, which has an axial component in the range of a few MV/cm associated to the spontaneous and piezoelectric polarization, and a radial piezoelectric contribution associated to the shear components of the lattice strain. At low dopant concentrations, a large electron-hole separation in both the axial and radial directions is present. The relatively weak radial electric fields, which are about one order of magnitude smaller than the axial fields, are rapidly screened by doping. This bidirectional screening leads to a radial and axial centralization of the hole underneath the electron, and consequently, to large decreases in PL decay times, in addition to luminescence blue shifts.

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InAs quantum boxes: Highly efficient radiative traps for light emitting devices on Si

Abstract: Growth and characterization of midinfrared InGaAs/InAlAs strained triplequantumwell lightemitting diodes grown on latticemismatched GaAs substrates Electroluminescence in vertically aligned quantum dot multilayer lightemitting diodes fabricating by growth induced islanding

Cited by 161 publications

References 7 publications

Buried dislocation networks designed to organize the growth of III-V semiconductor nanostructures

Buried dislocation networks designed to organize the growth of III-V semiconductor nanostructures

Photonic crystals in the optical regime â past, present and future

Long-lived excitons in GaN/AlN nanowire heterostructures

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InAs quantum boxes: Highly efficient radiative traps for light emitting devices on Si

Abstract: Growth and characterization of midinfrared InGaAs/InAlAs strained triplequantumwell lightemitting diodes grown on latticemismatched GaAs substrates Electroluminescence in vertically aligned quantum dot multilayer lightemitting diodes fabricating by growth induced islanding

Cited by 161 publications

References 7 publications

Buried dislocation networks designed to organize the growth of III-V semiconductor nanostructures

Buried dislocation networks designed to organize the growth of III-V semiconductor nanostructures

Photonic crystals in the optical regime â past, present and future

Long-lived excitons in GaN/AlN nanowire heterostructures

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Product

Resources

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Photonic crystals in the optical regime â past, present and future