InAs nanowire MOSFET differential active mixer on Si‐substrate

Abstract

An active single balanced down-conversion mixer is implemented using InAs nanowire metal oxide semiconductor field effect transistors (MOSFETs) as both active devices and passive resistive loads. Circuits with 6 dB low-frequency voltage gain and a 3 dB bandwidth of 2 GHz are measured for a DC power consumption of 3.8 mW from a 1.5 V supply. The circuits are fabricated using contacts made with 12 μmline-width optical lithography.

III–V compound semiconductor transistors–from planar to nanowire structures

“…Competitive radio frequency (RF) performance has been achieved, 108 and the fi rst RF circuits in the form of single-balanced down-conversion mixers operating up to 5 GHz were constructed. 109…”

InAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers

“…frequency. The low value for P in,1 dB is attributed to the sharp g m peak of the RF transistor, originating from large series resistances in the nanowires on the drain side of each MOSFET, thus the compression is referred to the input [15].…”

“…To demonstrate the use of nanowire-based InAs MOS-FETs in future Si-based RF applications, an active single balanced down-conversion mixer has been implemented as it includes both a transducer stage and a mixing stage, where both conductance and frequency properties are of high importance [15]. A circuit diagram of the implemented circuit can be seen in figure 1 together with simulations of the associated sine-wave signals at the corresponding input and output nodes.…”

Role of grooving angle of 14‐nm‐InAs channel quantum well MOSFETs in improving analogue/RF and linearity performance

“…Among the III-V semiconductors, InAs has been extensively investigated as the channel material for MOSFETs because it exhibits outstanding electron mobility of 33,000 cm 2 /Vs at room temperature, which is, for instance, 20 times higher than that of Si. Additionally, the bandgap of InAs is much lower compared to that of Si, allowing supply voltage scaling and the injection velocity of electrons in InAs is larger than that of those in Si, thereby rendering InAs transistors attractive, particularly at advanced technology nodes [7][8][9][10][11][12][13][14][15][16][17][18]. However, due to the lower effective mass of electrons, InAs has lower density-of-states which limits the drain current [19].…”