“…Among the III-V semiconductors, InAs has been extensively investigated as the channel material for MOSFETs because it exhibits outstanding electron mobility of 33,000 cm 2 /Vs at room temperature, which is, for instance, 20 times higher than that of Si. Additionally, the bandgap of InAs is much lower compared to that of Si, allowing supply voltage scaling and the injection velocity of electrons in InAs is larger than that of those in Si, thereby rendering InAs transistors attractive, particularly at advanced technology nodes [7][8][9][10][11][12][13][14][15][16][17][18]. However, due to the lower effective mass of electrons, InAs has lower density-of-states which limits the drain current [19].…”