InAs nanowire growth modes on Si (111) by gas source molecular beam epitaxy

Robson, Mitchell; LaPierre, Ray

doi:10.1016/j.jcrysgro.2015.11.035

Cited by 8 publications

(5 citation statements)

References 47 publications

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“…Since the smallest period of 1000 nm in our study is likely beyond this competitive growth regime, which is evidenced by the In/Sb droplets between the nanowires, it cannot explain our diameter trend with period. Instead, vapor-solid growth can show a proportional relationship, as in our study, since it does not rely on the supersaturation of a catalyst particle for axial growth [11]. In this case, the diameter difference between the arrays can be attributed to an increased adatom re-emission flux from the oxide surface between neighboring nanowires [21,22].…”

Section: Resultsmentioning

confidence: 62%

“…Indium was supplied by a standard effusion cell and As 2 was supplied from a hydride (AsH 3 ) gas cracker operating at 950 °C. Growth was performed in three stages; a short (50 nm) InAs stem for optimized yield and epitaxy [11], an InAsSb core with a Sb beam equivalent pressure (BEP) of 1×10 −7 Torr, and an InAsSb shell with an Sb BEP of 2.84×10 −7 Torr to achieve 5% and 14% fractional flux (flux of Sb relative to the total group V flux), respectively. In a fractional flux study (see supporting information available online at stacks.iop.org/NANOF/ 1/035001/mmedia) 5% fractional flux produced InAsSb nanowires with 23% Sb, and a 14% fractional flux resulted in 33% Sb.…”

Section: Methodsmentioning

confidence: 99%

“…All growth stages had an In impingement rate of 0.125 μm h -1 and a substrate temperature of 440 °C. Nanowires were grown on a low boron-doped (<1.33×10 14 cm −3 ) Si (111) substrate following the catalyst-free selective-area epitaxy growth method [11]. Electron beam lithography (EBL) and etching precisely defined the position of holes in a 20 nm SiO x layer deposited by chemical vapor deposition.…”

Section: Methodsmentioning

confidence: 99%

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Multispectral absorptance from large-diameter InAsSb nanowire arrays in a single epitaxial growth on silicon

et al. 2017

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Vertical III-V nanowires are capable of resonant absorption at specific wavelengths by tuning the nanowire diameter, thereby exceeding the absorption of equivalent thin films. These properties may be exploited to fabricate multispectral infrared (IR) photodetectors, directly integrated with Si, without the need for spectral filters or vertical stacking of heterostructures as required in thin film devices. In this study, multiple InAsSb nanowire arrays were grown simultaneously on Si by molecular beam epitaxy with nanowire diameter controlled by the nanowire period (spacing between nanowires). This is the first such study of patterned InAsSb nanowires where control of nanowire diameter and multispectral absorption are demonstrated. The antimony flux was used to control axial and radial growth rates using a selective-area catalyst-free growth method, achieving large diameters, spanning 440–520 nm, which are necessary for optimum IR absorption. Fourier transform IR spectroscopy revealed IR absorptance peaks due to the HE11 resonance of the nanowire arrays in agreement with optical simulations. Due to the dependence of the HE11 resonance absorption on nanowire diameter, multispectral absorption was demonstrated in a single material system and a single epitaxial growth step without the need for bandgap tuning. This work demonstrates the potential of InAsSb nanowires for multispectral photodetectors and sensor arrays in the short-wavelength IR region.

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Section: Resultsmentioning

confidence: 62%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Multispectral absorptance from large-diameter InAsSb nanowire arrays in a single epitaxial growth on silicon

et al. 2017

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“…However, the contact area of the nws with the Si substrate can be much smaller than the nw diameter (D) such that misfit dislocations are avoided. Selective-area epitaxy is one of the most common methods for the growth of nw arrays, whereby nws nucleate in an array of patterned holes that are formed in an oxide layer on a Si substrate [19]. In this approach, the contact area between each nw and the Si substrate (defined by the hole size) can remain below a critical diameter to avoid the formation of misfit dislocations [20], while the nw diameter can exceed the hole diameter by overgrowth onto the oxide.…”

Section: Absorptance In An Insb Nw Mwir Photodetectormentioning

confidence: 99%

Optical design of a mid-wavelength infrared InSb nanowire photodetector

Azizur-Rahman

LaPierre

2016

Nanotechnology

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A periodic array of vertical InSb nanowires (nws) was designed for photodetectors in the mid-wavelength infrared (MWIR) region (λ = 3-5 μm). Simulations, using the finite element method, were implemented to optimize the nw array geometrical parameters (diameter (D), period (P), and length (L)) for high optical absorptance, which exceeded that of a thin film of equal thickness. Our results showed HE1n resonances in InSb nw arrays can be tuned by adjusting D and P, thus enabling multispectral absorption throughout the near infrared to MWIR region. Optical absorptance was investigated for a practical photodetector consisting of a vertical InSb nw array embedded in bisbenzocyclobutene (BCB) as a support layer for an ultrathin Ni contact layer. Polarization sensitivity of the photodetector is examined.

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“…На сегодняшний день наиболее распространенными механизмами для описания роста полупроводниковых ННК являются предложенный Вагнером и Эллисом механизм " пар−жидкость−кристалл" (ПЖК) [1], который впоследствии был развит многочисленными авторами [2], и диффузионный механизм [3,4]. Особенности этих процессов многократно исследовались различными авторами [5][6][7][8][9][10][11][12][13]. В работах Дубровского, Гласа и др.…”

Section: Introductionunclassified

Рост наноструктур в системе Ga(In)AsP-GaAs в квазиравновесных условиях

Карлина¹,

Власов²,

Сошников³

et al. 2018

Физика И Техника Полупроводников

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The formation of nanostructures on the surface of GaAs under quasi-equilibrium conditions in a quasi-closed volume from saturated phosphor and indium vapors in the presence of a Au catalyst with growth according to the “vapor–liquid–crystal” mechanism is considered for the first time. The influence of the growth temperature and size of Au drops on the morphology and composition of the fabricated nanostructures is studied. Experimental data on the formation of Ga(In)AsP nanocrystals on GaAs substrates with various orientations are presented. It is established that the temperature growth range of the nanostructures when using this method is 540–640°C with a drop size from 30 to 120 nm. It is shown that the size of the catalyst drops substantially affects the morphology and growth rate of the fabricated nanostructures while their composition weakly depends on both the drop size and the substrate orientation.

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InAs nanowire growth modes on Si (111) by gas source molecular beam epitaxy

Cited by 8 publications

References 47 publications

Multispectral absorptance from large-diameter InAsSb nanowire arrays in a single epitaxial growth on silicon

Multispectral absorptance from large-diameter InAsSb nanowire arrays in a single epitaxial growth on silicon

Optical design of a mid-wavelength infrared InSb nanowire photodetector

Рост наноструктур в системе Ga(In)AsP-GaAs в квазиравновесных условиях

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