InAs/In0.83Al0.17As quantum wells on GaAs substrate with type-I emission at 2.9 <i>μ</i>m

Yuan, Gu; Zhang, YG; Chen, X. Y.; Cao, Yulian; Fang, Xiang; Ding, Guqiao; Li, Zhou

doi:10.1063/1.4798558

Cited by 6 publications

(5 citation statements)

References 19 publications

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“…Therefore the larger broadening along the Q x direction for sample A than for sample B, as shown in Table 1, implies a worse crystalline quality and larger density of misfit dislocations in sample A. On the other hand, the roughly equal broadening of intensity contours along the Q y direction is small for both samples A and B, which implies that the fluctuations of lattice parameter are similar on both GaAs and InP substrates, as has been reported in another work of our group [17]. Meanwhile, the broadening along the Q x direction is larger than that along the Q y direction for both samples, so the mismatch dislocations are the primary cause for lattice imperfection, whereas the rough interfaces and composition fluctuations are minor causes.…”

Section: Resultssupporting

confidence: 62%

See 1 more Smart Citation

GaAs-based In0.83Ga0.17As photodetector structure grown by gas source molecular beam epitaxy

Chen

Zhang

Yuan

et al. 2014

Journal of Crystal Growth

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Section: Resultssupporting

confidence: 62%

“…The lattice mismatch between In 0.83 Ga 0. 17 As layer and substrate is increased from þ2.1% on InP to þ5.9% on GaAs substrate. Therefore, more research is needed on both material growth and device processing to adopt GaAs substrate for InGaAs PDs and arrays.…”

Section: Introductionmentioning

confidence: 98%

GaAs-based In0.83Ga0.17As photodetector structure grown by gas source molecular beam epitaxy

Chen

Zhang

Yuan

et al. 2014

Journal of Crystal Growth

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“…In x Ga 1− x As alloy with indium (In) content higher than 0.53 is of great interest in involving near infrared optoelectronic devices due to its convenient band gap tailoring in the range of 0.36–0.74 eV, such as wavelength‐extended ( λ > 1.7 µm) photodetectors (PDs) , quantum well lasers . In x Ga 1− x As (0.53 < x < 1) is also widely applied in high electron mobility transistors (HEMTs) .…”

Section: Introductionmentioning

confidence: 99%

Optical characterization of Si‐doped metamorphic InGaAs with high indium content

Chen

Yuan

Zhang

et al. 2017

Physica Status Solidi (b)

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The optical properties of Si‐doped metamorphic InGaAs layers with electron concentration in the range of 3 × 1016 to 6 × 1018 cm−3 are investigated in detail. The 10 K photoluminescence spectrum of lightly doped metamorphic In0.81Ga0.19As showed a narrow sharp peak at 546 meV with a full width at half maximum of 17.1 meV, comparable to that of InP‐lattice‐matched In0.53Ga0.47As, which is an evidence of the good crystalline quality. In the temperature range of 10–300 K, only band‐to‐band transition was observed in both lightly Si‐doped In0.53Ga0.47As and In0.81Ga0.19As, while the band‐to‐band emission was overlapped by multiple transitions in heavily Si‐doped In0.81Ga0.19As. A marked blueshift and significant increase in the linewidth of photoluminescence at high doping level were observed due to the enhanced band filling as well as many body effects in the heavily Si‐doped high indium content material. The alloy disorder, caused by heavy Si doping, seriously degrades the crystalline quality and immensely reduces the possibilities of radiative recombination in In0.81Ga0.19As.

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“…By using 15 nm InAs QWs on continuously-graded metamorphic In x Al 1-x As buffers, RT PL of QWs at 3.05 µm [42] and low temperature lasing of laser diodes at 2.7 µm have been achieved [43]. This scheme can even be explored to mid-infrared metamorphic InAs QWs on GaAs substrate, which is even more attractive than on InP substrate [44]. Optoelectronics -Materials and Devices Figure 4(a) and Figure 4(b), respectively.…”

Section: Development Of Semiconductor Lasers In the 2-3 µM Bandmentioning

confidence: 99%

InP-Based Antimony-Free MQW Lasers in 2-3 μm Band

Yuan¹,

Zhang²

2015

Optoelectronics - Materials and Devices

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Mid-infrared semiconductor lasers in the wavelength range of 2-3 µm have aroused increasing interests as they are highly desired for a wide range of applications ranging from medical diagnostics to environmental sensing. Access to this wavelength range was mainly achieved by antimony-containing compound semiconductor structures on GaSb substrates. Besides, InP-based In x Ga 1-x As (x>0.53) type-I multiple quantum well laser is a promising antimony-free approach in this band. The emission wavelength can be tailored to the 2-3 µm band by increasing the indium composition in the quantum wells. During the demonstration of this kind of lasers, controlling the strain and keeping fair structural quality is the main obstacle. In this chapter, the route for developing this kind of lasers is reviewed. The schemes of pseudomorphic and metamorphic structures are discussed for the 2-2.5 µm and 2.5-3 µm range, respectively. In the pseudomorphic scheme, triangular quantum wells grown by digital alloy technology are applied to restrict the strain and increase the lasing wavelength. Lasers at 2.43 µm were demonstrated under continuous wave operation at room temperature. To extend the emission wavelength longer, an InPbased metamorphic template with larger lattice constant was produced and InAs quantum wells were then grown. The lasing wavelength was further increased up to 2.71 µm. The details on the gas source molecular beam epitaxial growth, device processing as well as performance characterization are presented.

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InAs/In0.83Al0.17As quantum wells on GaAs substrate with type-I emission at 2.9 μm

Cited by 6 publications

References 19 publications

GaAs-based In0.83Ga0.17As photodetector structure grown by gas source molecular beam epitaxy

GaAs-based In0.83Ga0.17As photodetector structure grown by gas source molecular beam epitaxy

Optical characterization of Si‐doped metamorphic InGaAs with high indium content

InP-Based Antimony-Free MQW Lasers in 2-3 μm Band

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