InAs/GaSb superlattices grown by LP-MOCVD for ∼10μm wavelength infrared range

Chang, Yuchun; Wang, Tao; Yin, Fei; Wang, Jingwei; Song, Zhenyu; Wang, Yiding; Yin, Jingzhou

doi:10.1016/j.infrared.2011.07.009

Cited by 3 publications

(2 citation statements)

References 19 publications

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“…Zhang's group [158] suggested that introducing a ∼2ML-thick InAs 0.8 Sb 0.2 layer at the GaSb → InAs interfaces of the T2SLs would significantly improve the morphology and structural properties. Chang et al also [159] demonstrated the validity of an InAsSb interface layer, by which ∼10 µm LWIR T2SLs were obtained, and confirmed effective flexibility in a growth temperature range of 500 • C-520 • C utilizing LP-MOCVD. Nedelcu's group [154] proposed a complex scheme with a smooth InAs → InAsSb → InGaSb → GaSb → InGaSb → InAsSb → InAs structure achieving optimal morphology and low strain.…”

Section: Growth Of Inas/gasb T2slsmentioning

confidence: 81%

Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook

Jia

Deng

Liu

et al. 2023

J. Phys. D: Appl. Phys.

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Reduction in the size, weight, and power consumption of an infrared (IR) detection system (referred to as SWaP) is one of the critical challenges lying ahead for the development of nowadays IR detector technology, especially for Mid-/Long-wavelength IR wavebands, which calls for high operating temperature (HOT) IR photodetectors with good sensitivity that would ease the burden for the cooling systems. Emerging as strong competitors to HgCdTe detectors, antimonide (Sb)-based IR photodetectors and focal plane array (FPA) imagers have gradually stepped into real world applications after decades of development, thanks to their outstanding material properties, tunability of cut-off wavelengths, feasibility of device designs, and great potentials for mass production with low costs. Meanwhile, emerging demands of versatile applications seek for fast, compact and smart IR detection systems, in which integration of Sb-based IR photodetectors on the Si platform enables the direct information readout and processing with Si based microelectronics. This paper reviews recent progress in Sb-based HOT IR photodetectors and FPAs, which includes the fundamental material properties and device designs based on the bulk InAsSb, InAs/GaSb and InAs/InAsSb type-II superlattices, together with the cutting-edge performance achieved. This work also covers the new trends of development in the Sb-based IR photodetectors like optical engineering for signal harvesting, photonic integration techniques, as well as MOCVD growth of antimonides. Finally, challenges and possible solutions for future works are provided from the perspectives of material growth, device design and imaging system. These new advances may cast light on designs and strategies for achieving HOT devices at thermoelectric cooling temperatures (yet with lower costs) by identifying existing challenges, and find more extensive emerging applications.

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Section: Growth Of Inas/gasb T2slsmentioning

confidence: 81%

Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook

Jia

Deng

Liu

et al. 2023

J. Phys. D: Appl. Phys.

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“…Промышленное изготовление полупроводниковых приборов, в том числе для приложений в области опто-и фотоэлектроники, традиционно производится методом газофазной эпитаксии из металлоорганических соединений (МОСГФЭ). С учетом все возрастающих потребностей в приборах оптоэлектроники СВ ИК диапазона (см., например, обзоры [11,12]), отработка и совершенствование технологии МОСГФЭ для структур на основе InAs/GaSb становится весьма актуальной, однако количество исследований в этой области пока ограничено [13][14][15][16][17][18][19][20]. Кроме того, до самого последнего времени исследования роста СР в системе InAs/GaSb методом МОСГФЭ проводились с выращиванием относительно толстых (толщиной более 5 nm) слоев [14][15][16][17][18][19][20].…”

Section: Introductionunclassified

Исследование возможностей метода газофазной эпитаксии из металлорганических соединений для изготовления тонких слоев InAs/GaSb

Левин¹,

Пушный²,

Федоров³

et al. 2019

Журнал Технической Физики

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Capabilities of Metal Organic Chemical Vapor Deposition (MOCVD) method for fabrication of multi-layer InAs/GaSb structures with thin (1-2 nm) layers on GaSb substrates were studied. Properties of fabricated structures were studied by transmission electron microscopy and photo- and electro-luminescence. It was found that during growth, two solid solutions GaInAsSb of different compositions were formed in the active region of the structures. The system obtained is characterized by emission at the wavelength of 4.96 µm at the temperature 77 K. Our results demonstrate new capabilities of MOCVD method for bandgap engineering of semiconductor structures based on InAs/GaSb and designed for optoelectronic devices for infrared wavelength range.

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Examination of the Capabilities of Metalorganic Vapor-Phase Epitaxy in Fabrication of Thin InAs/GaSb Layers

et al. 2019

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InAs/GaSb superlattices grown by LP-MOCVD for ∼10μm wavelength infrared range

Cited by 3 publications

References 19 publications

Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook

Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook

Исследование возможностей метода газофазной эпитаксии из металлорганических соединений для изготовления тонких слоев InAs/GaSb

Examination of the Capabilities of Metalorganic Vapor-Phase Epitaxy in Fabrication of Thin InAs/GaSb Layers

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