InAs/GaSb/AlSb composite quantum well structure preparation with help of reflectance anisotropy spectroscopy

Hospodková, A.; Hulicius, E.; Pangrác, J.; Dominec, Filip; Mikhaĭlova, M. P.; Veĭnger, A. I.; Kochman, I. V.

doi:10.1016/j.jcrysgro.2016.11.079

Cited by 9 publications

(4 citation statements)

References 16 publications

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“…On this sample, we layer transfer graphene on half of the GaSb (001) substrate using a wet transfer procedure similar to the one that has previously been used for remote epitaxy of GaAs, including an HCl etch to remove native oxides from the substrate 1 , 13 (Methods). HCl 23 – 25 and HCl+H 2 O 2 solutions 26 , 27 are also commonly used to etch native oxides from GaSb. The other half of the sample has an exposed GaSb surface for direct epitaxy.…”

Section: Resultsmentioning

confidence: 99%

Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene-terminated surfaces

et al. 2022

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Remote epitaxy is a promising approach for synthesizing exfoliatable crystalline membranes and enabling epitaxy of materials with large lattice mismatch. However, the atomic scale mechanisms for remote epitaxy remain unclear. Here we experimentally demonstrate that GaSb films grow on graphene-terminated GaSb (001) via a seeded lateral epitaxy mechanism, in which pinhole defects in the graphene serve as selective nucleation sites, followed by lateral epitaxy and coalescence into a continuous film. Remote interactions are not necessary in order to explain the growth. Importantly, the small size of the pinholes permits exfoliation of continuous, free-standing GaSb membranes. Due to the chemical similarity between GaSb and other III-V materials, we anticipate this mechanism to apply more generally to other materials. By combining molecular beam epitaxy with in-situ electron diffraction and photoemission, plus ex-situ atomic force microscopy and Raman spectroscopy, we track the graphene defect generation and GaSb growth evolution a few monolayers at a time. Our results show that the controlled introduction of nanoscale openings in graphene provides an alternative route towards tuning the growth and properties of 3D epitaxial films and membranes on 2D material masks.

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Section: Resultsmentioning

confidence: 99%

Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene-terminated surfaces

et al. 2022

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“…In the broken gap heterojunctions 𝐸 𝑐 of InSe is lower than 𝐸 𝑣 of Sb 2 Te 3 forcing an overlap between the conduction band of InSe with valence band of Sb 2 Te 3 . Such type of heterojunction devices were nominated as promising devices for spintronic and nanoelectronic applications [13]. The band bending, vacuum level lowering and thermal equilibrium of Fermi levels are shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Yb/InSe/Sb2Te3/Au BROKEN GAP HETEROJUNCTION DEVICES DESIGNED AS CURRENT RECTIFIERS, TUNABLE MOS CAPACITORS AND GIGAHERTZ MICROWAVE CAVITIES

Alfhaid¹,

Qasrawi²,

Algarni³

2021

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Herein, we report the design and experimental characterization of a broken gap heterojunction devices fabricated by vacuum evaporation of Yb/InSe/Sb2Te3/Au stacked layers. The structural characterizations of the stacked layers revealed an amorphous/polycrystalline heterojunction type. The measurements of capacitance-voltage characteristics in the frequency domain of 1.0-9.0 MHz displayed tunable metal-oxidesemiconductor (MOS) characteristics. The frequency dependent built-in voltage, depletion width, and free carrier density is also investigated. In addition, the analyses of currentvoltage characteristics have shown that the device displays highly stable current rectification ratios of ~103 above 0.20 V. Moreover, the ac signal analyses in the frequency domain of 10-1800 MHz have shown the possible tunability of the conductance and capacitance over a wide range of frequency. Furthermore, the microwave cutoff frequency spectra indicated increasing cutoff frequency limits with increasing incident signal frequency. The microwave cutoff frequency reached 7.1 GHz for a propagating signal of frequency of 1800 MHz.

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“…Обе ямы в ККЯ предварительно не легировались. Процесс выращивания контролировался in situ с помо-щью установки спектроскопии анизотропного отражения (RAS) [25]. Ширина ям выбиралась из условия по-лучения инвертированной (полуметаллической) зонной структуры ККЯ.…”

Section: образцы и методика измеренийunclassified

Вертикальный транспорт в гетеропереходах II типа с композитными квантовыми ямами InAs/GaSb/AlSb в сильном магнитном поле

Mikhaĭlova¹,

Berezovets

Parfen’ev³

et al. 2017

Физика И Техника Полупроводников

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Вертикальный транспорт исследован в гетеропереходах II типа с двухбарьерной квантовой ямой AlSb/InAs/GaSb/AlSb, выращенной методом МОГФЭ (MOVPE) на подложке n-InAs(100), в квантующих магнитных полях до B = 14 Тл при низких температурах, T = 1.5 и 4.2 K. Ширина квантовых ям выбиралась из условия получения инвертированной зонной структуры. Измерения осцилляций Шубникова−де-Гааза проводились при двух ориентациях магнитного поля (перпендикулярной и параллельной) относи-тельно плоскости структуры. Установлено, что проводимость в исследуемой структуре осуществлялась как трехмерными (3D) электронами подложки, так и двумерными (2D) электронами квантовой ямы InAs в условиях квантового предела для объемных электронов (B > 5 Tл). Определены концентрации электронов в подложке и в квантовой яме InAs, а также g-фактор для трехмерных носителей из спинового расщепления нулевого уровня Ландау. Показано, что максимумы кондактанса в магнитном поле, перпендикулярном плоскости структуры и параллельном току через структуру, в полях B > 9 Тл соответствуют резонансному туннелированию 3D электронов из подложки-эмиттера в квантовую яму InAs через 2D электронные состояния уровней Ландау.

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InAs/GaSb/AlSb composite quantum well structure preparation with help of reflectance anisotropy spectroscopy

Cited by 9 publications

References 16 publications

Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene-terminated surfaces

Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene-terminated surfaces

Yb/InSe/Sb2Te3/Au BROKEN GAP HETEROJUNCTION DEVICES DESIGNED AS CURRENT RECTIFIERS, TUNABLE MOS CAPACITORS AND GIGAHERTZ MICROWAVE CAVITIES

Вертикальный транспорт в гетеропереходах II типа с композитными квантовыми ямами InAs/GaSb/AlSb в сильном магнитном поле

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