InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires

Scarpellini, D.; Somaschini, Claudio; Fedorov, Alexey; Bietti, Sergio; Frigeri, C.; Grillo, Vincenzo; Esposito, Luca; Salvalaglio, Marco; Marzegalli, Anna; Montalenti, Francesco; Bonera, Emiliano; Medaglia, P. G.; Sanguinetti, S.

doi:10.1021/nl504690r

Cited by 22 publications

(28 citation statements)

References 58 publications

(87 reference statements)

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“…However, notice that it can be straightforwardly used to investigate realistic shapes as shown in Refs. [37][38][39].…”

Section: Elastic Vs Plastic Relaxation: Theorymentioning

confidence: 99%

“…However, notice that it can be straightforwardly used to investigate realistic shapes as shown in Refs. [37][38][39]. Following the work in [35], the typical elastic field of VHEs as in Figure 7a can be computed by FEM calculations and it is illustrated in Figure 7b for a pure Ge epilayer by means of the hydrostatic stress .…”

Section: Elastic Vs Plastic Relaxation: Theorymentioning

confidence: 99%

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Dislocation-Free SiGe/Si Heterostructures

et al. 2018

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Ge vertical heterostructures grown on deeply-patterned Si(001) were first obtained in 2012 (C.V. Falub et al., Science 2012, 335, 1330-1334, immediately capturing attention due to the appealing possibility of growing micron-sized Ge crystals largely free of thermal stress and hosting dislocations only in a small fraction of their volume. Since then, considerable progress has been made in terms of extending the technique to several other systems, and of developing further strategies to lower the dislocation density. In this review, we shall mainly focus on the latter aspect, discussing in detail 100% dislocation-free, micron-sized vertical heterostructures obtained by exploiting compositional grading in the epitaxial crystals. Furthermore, we shall also analyze the role played by the shape of the pre-patterned substrate in directly influencing the dislocation distribution.

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“…However, notice that it can be straightforwardly used to investigate realistic shapes as shown in Refs. [37][38][39].…”

Section: Elastic Vs Plastic Relaxation: Theorymentioning

confidence: 99%

Section: Elastic Vs Plastic Relaxation: Theorymentioning

confidence: 99%

Dislocation-Free SiGe/Si Heterostructures

et al. 2018

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“…We are now interested in the crystal structure of the nanowires, especially in the structural quality of the GaAs/In 0.85 Ga 0. 15 As interface. Figure 5a shows a bright field high-resolution TEM image of a structure.…”

Section: Inas-on-gaas Nanowire Interface Sharpness and Crystalline Qumentioning

confidence: 99%

“…Here, In 0.85 Ga 0.15 As has a lattice parameter ̴ 6% larger than GaAs: a large strain builds across the GaAs/In 0.85 Ga 0. 15 As interface and has to be released to minimize the energy of the system. We calculate that for a certain number of planes in a GaAs segment of 33 nm in diameter (a = 0.39845 nm in wurtzite GaAs), the diameter expansion is 2.36 nm for a fully relaxed InAs segment containing the same number of planes (a = 0.4269 nm).…”

Section: Inas-on-gaas Nanowire Interface Sharpness and Crystalline Qumentioning

confidence: 99%

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Dislocation-free axial InAs-on-GaAs nanowires on silicon

Beznasyuk¹,

Robin²,

Hertog³

et al. 2017

Nanotechnology

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We report on the growth of axial InAs-on-GaAs nanowire heterostructures on silicon by molecular beam epitaxy using 20 nm diameter Au catalysts. First, the growth parameters of the GaAs nanowire segment were optimized to achieve a pure wurtzite crystal structure. Then, we developed a two-step growth procedure to enhance the yield of vertical InAs-on-GaAs nanowires. We achieved 90% of straight InAs-on-GaAs nanowires by further optimizing the growth parameters. We investigated the composition change at the interface by energy dispersive X-ray spectroscopy and the nanowire crystal structure by transmission electron microscopy. The nominal composition of the InAs segment is found to be In x Ga 1-x As with x=0.85 and corresponds to 6% of lattice mismatch with GaAs. Strain mapping performed by the geometrical phase analysis of high-resolution images revealed a dislocation-free GaAs/In 0.85 Ga 0.15 As interface. In conclusion, we successfully fabricated highly mismatched heterostructures, confirming the prediction that axial GaAs/In 0.85 Ga 0.15 As interfaces are pseudomorphic in nanowires below 40 nm diameter.

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Band Edges Engineering of 2D/2D Heterostructures: The C₃N₄/Phosphorene Interface

Liberto

Tosoni

2022

ChemPhysChem

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We investigate the interface between carbon nitride (C3N4) and phosphorene nanosheets (P‐ene) by means of Density Functional Theory (DFT) calculations. C3N4/P‐ene composites have been recently obtained experimentally showing excellent photoactivity. Our results indicate that the formation of the interface is a favorable process driven by Van der Waals forces. The thickness of P‐ene nanosheets determines the band edges offsets and the charge carriers’ separation. The system is predicted to pass from a nearly type‐II to a type‐I junction when the thickness of P‐ene increases, and the conduction band offset is particularly sensitive. Last, we apply the Transfer Matrix Method to estimate the efficiency for charge carriers’ migration as a function of the P‐ene thickness.

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InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires

Cited by 22 publications

References 58 publications

Dislocation-Free SiGe/Si Heterostructures

Dislocation-Free SiGe/Si Heterostructures

Dislocation-free axial InAs-on-GaAs nanowires on silicon

Band Edges Engineering of 2D/2D Heterostructures: The C₃N₄/Phosphorene Interface

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InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires

Cited by 22 publications

References 58 publications

Dislocation-Free SiGe/Si Heterostructures

Dislocation-Free SiGe/Si Heterostructures

Dislocation-free axial InAs-on-GaAs nanowires on silicon

Band Edges Engineering of 2D/2D Heterostructures: The C3N4/Phosphorene Interface

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Product

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Band Edges Engineering of 2D/2D Heterostructures: The C₃N₄/Phosphorene Interface