InAs/GaAs quantum dot semiconductor saturable absorber for controllable dual-wavelength passively Q-switched fiber laser

Wang, X.; Zhu, Yongjian; Jiang, Ching-Long; Guo, Yixuan; Ge, Xiaotian; Chen, H. M.; Ning, Jiqiang; Zheng, Changcheng; Peng, Yong; Li, Xiao Hui; Zhang, Z. Y.

doi:10.1364/oe.27.020649

Cited by 15 publications

(6 citation statements)

References 43 publications

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“…Therefore, a 10-time stronger 1550-nm emission than the non-SSL capped QDs is observed. The superior carrier dynamics in the 1550-nm QDs endows the QD-SESAMs with highly saturable absorption performance, manifested as a very small saturation intensity of 13.7 MW/cm 2 and a larger nonlinear modulation depth of 1.6 % which is 4 times to the value reported in [24, 35]. Benefitting from the high performance of the QD-SESAM with SSL CLs, we have successfully constructed an EDF laser and achieved the stable mode–locked lasing at 1556 nm, with the pulse duration of 920 fs.…”

Section: Introductionmentioning

confidence: 78%

“…In our previous work, the asymmetric InAs/GaAs QDs working at 1550 nm were fabricated, by which a mode-locked Er-doped glass oscillator has been achieved with 2 ps pulse width [24]. And recently, a 1550 nm QD-SESAM with InGaAs capped InAs/GaAs structure was fabricated, with which a dual-wavelength passively Q-switched erbium-doped fiber (EDF) laser has been achieved [35]. However, the performances of the obtained lasers were limited due to the small modulation depth of 0.4% of these QD-SESAMs.…”

Section: Introductionmentioning

confidence: 99%

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Development of a 1550-nm InAs/GaAs Quantum Dot Saturable Absorber Mirror with a Short-Period Superlattice Capping Structure Towards Femtosecond Fiber Laser Applications

Jiang

Ning

et al. 2019

Nanoscale Res Lett

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Low-dimensional III–V InAs/GaAs quantum dots (QDs) have been successfully applied to semiconductor saturable absorber mirrors (SESAMs) working at a 900–1310-nm wavelength range for ultrafast pulsed laser applications benefitting from their broad bandwidth, wavelength flexibility, and low saturation fluence. However, it is very challenging to obtain a high-performance QD-SESAM working at the longer wavelength range around 1550 nm due to the huge obstacle to epitaxy growth of the QD structures. In this work, for the first time, it is revealed that, the InAs/GaAs QD system designed for the 1550-nm light emission range, the very weak carrier relaxation process from the capping layers (CLs) to QDs is mainly responsible for the poor emission performance, according to which we have developed a short-period superlattice (In0.20Ga0.80As/In0.30Ga0.70As)5 as the CL for the QDs and has realized ~ 10 times stronger emission at 1550 nm compared with the conventional InGaAs CL. Based on the developed QD structure, high-performance QD-SESAMs have been successfully achieved, exhibiting a very small saturation intensity of 13.7 MW/cm2 and a large nonlinear modulation depth of 1.6 %, simultaneously, which enables the construction of a 1550-nm femtosecond mode-locked fiber lasers with excellent long-term working stability.

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Section: Introductionmentioning

confidence: 78%

Section: Introductionmentioning

confidence: 99%

Development of a 1550-nm InAs/GaAs Quantum Dot Saturable Absorber Mirror with a Short-Period Superlattice Capping Structure Towards Femtosecond Fiber Laser Applications

Jiang

Ning

et al. 2019

Nanoscale Res Lett

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“…Due to their high-power density, high repetition frequency, and narrow pulse duration, the ultrashort pulse lasers can be used in the fields of medical imaging, space ranging, laser weapons, material processing, optical fiber communication, and confidential measurement [ 184 , 185 , 186 , 187 , 188 ]. Ultrashort pulse lasers have mainly been achieved by the active and passive mode-locked methods.…”

Section: Qd Lasers Towards Fiber-optic Communicationmentioning

confidence: 99%

Recent Developments of Quantum Dot Materials for High Speed and Ultrafast Lasers

et al. 2022

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Owing to their high integration and functionality, nanometer-scale optoelectronic devices based on III-V semiconductor materials are emerging as an enabling technology for fiber-optic communication applications. Semiconductor quantum dots (QDs) with the three-dimensional carrier confinement offer potential advantages to such optoelectronic devices in terms of high modulation bandwidth, low threshold current density, temperature insensitivity, reduced saturation fluence, and wavelength flexibility. In this paper, we review the development of the molecular beam epitaxial (MBE) growth methods, material properties, and device characteristics of semiconductor QDs. Two kinds of III-V QD-based lasers for optical communication are summarized: one is the active electrical pumped lasers, such as the Fabry–Perot lasers, the distributed feedback lasers, and the vertical cavity surface emitting lasers, and the other is the passive lasers and the instance of the semiconductor saturable absorber mirrors mode-locked lasers. By analyzing the pros and cons of the different QD lasers by their structures, mechanisms, and performance, the challenges that arise when using these devices for the applications of fiber-optic communication have been presented.

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“…, which allows us to simulate the optical response at varying intensities of light. This model is applicable to many saturable absorbing materials, including quantum dots [18], rare-earth ions [19], and low dimensional materials [20]. The response of the saturable absorbers to an incident electric field is described by the Maxwell Bloch equations [21], which allow us to calculate 𝜒 !"…”

Section: Saturable Absorber Modelmentioning

confidence: 99%

Low power threshold, ultrathin optical limiter based on a nonlinear zone plate

2021

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Ultrathin optical limiters are needed to protect light sensitive components in miniaturized optical systems. However, it has proven challenging to achieve a sufficiently low optical limiting threshold. In this work, we theoretically show that an ultrathin optical limiter with low threshold intensity can be realized using a nonlinear zone plate. The zone plate is embedded with nonlinear saturable absorbing materials that allow the device to focus low intensity light, while high intensity light is transmitted as a plane wave without a focal spot. Based on this proposed mechanism, we use the finite-difference time-domain method to computationally design a zone plate embedded with InAs quantum dots as the saturable absorbing material. The device has a thickness of just 0.5 𝜇m and exhibits good optical limiting behavior with a threshold intensity as low as 0.45 kW/cm 2 , which is several orders of magnitude lower than current ultrathin flat-optics-based optical limiters. This design can be optimized for different operating wavelengths and threshold intensities by using different saturable absorbing materials. Additionally, the diameter and focal length of the nonlinear zone plate can be easily adjusted to fit different systems and applications. Due to its flexible design, low power threshold, and ultrathin thickness, this optical limiting concept may be promising for application in miniaturized optical systems.

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InAs/GaAs quantum dot semiconductor saturable absorber for controllable dual-wavelength passively Q-switched fiber laser

Cited by 15 publications

References 43 publications

Development of a 1550-nm InAs/GaAs Quantum Dot Saturable Absorber Mirror with a Short-Period Superlattice Capping Structure Towards Femtosecond Fiber Laser Applications

Development of a 1550-nm InAs/GaAs Quantum Dot Saturable Absorber Mirror with a Short-Period Superlattice Capping Structure Towards Femtosecond Fiber Laser Applications

Recent Developments of Quantum Dot Materials for High Speed and Ultrafast Lasers

Low power threshold, ultrathin optical limiter based on a nonlinear zone plate

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