InAs/AlSb HEMT and Its Application to Ultra-Low-Power Wideband High-Gain Low-Noise Amplifiers

InAs High-Electron Mobility Transistors on the Path to THz Operation

“…In fact, there has been a lot of effort to exploit the extraordinary transport properties of relaxed InAs or InAsSb. Transistors based on these materials with ~0.6 nm lattice constant have yielded excellent performance at very low voltages but have yet to approach InAs HEMTs on InP probably due to excessive impact ionization and large output conductance [17]. Device structural innovation introducing a high degree of channel confinement will be required to overcome these issues.…”

AlGaSb Buffer Layers for Sb-Based Transistors

“…10 In addition, low-power wideband LNAs have been demonstrated. 12 InAs and the (In,Ga,Al)Sb alloys have lattice constants greater than 0.6 nm. Unfortunately, there are no suitable zincblende insulating substrates with these lattice constants.…”

Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor

“…Based on III-V material system, heterostructure field-effect transistors (HFETs), such as metal-semiconductor (M-S) field-effect transistors (MESFETs) and modulation-doped field-effect transistors (MODFETs), have attracted much attention for signal amplifier, high-speed, and digital circuit applications [1][2][3]. Among of the HFETs, device performance with high output current and device linearity are particularly essential for large signal and linear amplification applications.…”