InAlN/GaN high electron mobility micro-pressure sensors for high-temperature environments

Chapin, Caitlin A.; Miller, Ruth A.; Dowling, Karen M.; Chen, Ruiqi; Senesky, Debbie G.

doi:10.1016/j.sna.2017.06.009

Cited by 31 publications

(20 citation statements)

References 28 publications

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“…It is important to note that the sensitivity values obtained from our AlGaN/GaN pressure sensor are orders of magnitude higher than the sensitivity value of 0.02% change for 50 bar reported by Boulbar et al on AlGaN/GaN heterojunction based pressure sensors fabricated on sapphire substrate [ 19 ]. Our results are also close to an order of magnitude better than the recently reported sensitivity value of 0.64%/psig (= 0.09%/kPa) measured on InAlN/GaN heterostructure based micro-pressure sensors [ 33 ].…”

Section: Resultssupporting

confidence: 86%

High Temperature AlGaN/GaN Membrane Based Pressure Sensors

2018

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A highly sensitive Gallium Nitride (GaN) diaphragm based micro-scale pressure sensor with an AlGaN/GaN heterostructure field effect transistor (HFET) deflection transducer has been designed and fabricated for high temperature applications. The performance of the pressure sensor was studied over a pressure range of 20 kPa, which resulted in an ultra-high sensitivity of ~0.76%/kPa, with a signal-to-noise ratio as high as 16 dB, when biased optimally in the subthreshold region. A high gauge factor of 260 was determined from strain distribution in the sensor membrane obtained from finite element simulations. A repeatable sensor performance was observed over multiple pressure cycles up to a temperature of 200 °C.

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Section: Resultssupporting

confidence: 86%

High Temperature AlGaN/GaN Membrane Based Pressure Sensors

2018

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“… 12 The ROS production can be triggered by the dissolved metal ions in solution. GaN is often quoted as an extremely stable material in harsh conditions 27 and a very promising interface for many biosensing applications. 28 Despite the fact that our samples are in solution for only a few minutes to perform the calcium assay, we verify the amount of gallium leached in a solution from the samples during the assay and after one day of incubation in the solution (see the Supporting Information for all of the data and statistical analysis).…”

Section: Results and Discussionmentioning

confidence: 99%

Noninvasive Stimulation of Neurotypic Cells Using Persistent Photoconductivity of Gallium Nitride

et al. 2018

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The persistent photoconductivity (PPC) of the n-type Ga-polar GaN was used to stimulate PC12 cells noninvasively. Analysis of the III–V semiconductor material by atomic force microscopy, Kelvin probe force microscopy, photoconductivity, and X-ray photoelectron spectroscopy quantified bulk and surface charge, as well as chemical composition before and after exposure to UV light and cell culture media. The semiconductor surface was made photoconductive by illumination with UV light and experienced PPC, which was utilized to stimulate PC12 cells in vitro. Stimulation was confirmed by measuring the changes in intracellular calcium concentration. Control experiments with gallium salt verified the stimulation of neurotypic cells. Inductively coupled plasma mass spectrometry data confirmed the lack of gallium leaching and toxic effects during the stimulation.

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“…Previous studies have shown GaN to be stable in even harsh conditions, and no signicant leaching over a 2 days period. 25,33 This study, up to this point, has largely ignored the cellular mechanics and processes which might be involved in cellular stimulation while instead focusing on the material's properties (PPC, doping, chemistry, etc.). It is important to note however that both, intracellular ROS production and calcium release are important intracellular signaling molecules, which are present in various organelles in the cell, and oen have either self-amplifying or deteriorative relationships depending on not only the organelle function, but also the metabolic state of the cell.…”

Section: Changes In [Ca 2+ ] I and Ros Productionmentioning

confidence: 99%