In0.5Ga0.5N Layers by Atomic Layer Deposition

Abstract

<p><b>We present an ALD approach to metastable In<sub>1‑x</sub>Ga<sub>x</sub>N with 0.1 < x < 0.5 based on co-sublimed solid In- and Ga-precursors that were co-sublimed into the deposition chamber in one pulse. A near In<sub>0.5</sub>Ga<sub>0.5</sub>N film with a bandgap of 1.94 eV was achieved on Si (100) substrate. Epitaxial In<sub>1‑x</sub>Ga<sub>x</sub>N (0002) was successfully grown directly on 4H-SiC (0001). </b></p>