In-vacuum active electronics for microfabricated ion traps

Guise, Nicholas D.; Fallek, Spencer D.; Hayden, Harley; Pai, C. S.; Volin, Curtis; Brown, Kenneth R.; Merrill, J. True; Harter, Alexa W.; Amini, Jason M.; Lust, Lisa M.; Muldoon, Kelly; Carlson, D.; Budach, Jerry

doi:10.1063/1.4879136

Cited by 19 publications

(22 citation statements)

References 17 publications

(15 reference statements)

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“…The use of through-silicon-via technology can eliminate wirebonds from the chip surface, as has recently been demonstrated for surface-electrode ion traps. 21 When compared to single-metal-layer traps (SMLTs) on sapphire substrates, these traps exhibit increased scatter of laser light, possibly due to higher as-deposited roughness of the aluminum layer. We examined the trap-electrode surface using atomic force microscopy and measured an RMS roughness of 35 nm, significantly larger than the 2 nm we have measured on SMLTs.…”

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confidence: 99%

Ion traps fabricated in a CMOS foundry

Mehta

Eltony

Bruzewicz

et al. 2014

Applied Physics Letters

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We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size. This is the first demonstration of scalable quantum computing hardware, in any modality, utilizing a commercial CMOS process, and it opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays.Comment: 4 pages, 3 figure

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confidence: 99%

Ion traps fabricated in a CMOS foundry

Mehta

Eltony

Bruzewicz

et al. 2014

Applied Physics Letters

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“…We characterize the BGA trap by loading single and multiple 40 Ca + ions. Performance of the trap is comparable to previous microfabricated surface traps in terms of ion heating rate, axial mode stability, and storage lifetime for one and two trapped ions 10,[17][18][19] . We take advantage of the reduced trap die size and improved optical access to demonstrate tighter focusing of a 729 nm laser beam with resulting speedup in single-qubit rotation rates.…”

Section: Introductionmentioning

confidence: 67%

Ball-grid array architecture for microfabricated ion traps

Guise

Fallek

Stevens

et al. 2015

Journal of Applied Physics

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State-of-the-art microfabricated ion traps for quantum information research are approaching nearly one hundred control electrodes. We report here on the development and testing of a new architecture for microfabricated ion traps, built around ball-grid array (BGA) connections, that is suitable for increasingly complex trap designs. In the BGA trap, through-substrate vias bring electrical signals from the back side of the trap die to the surface trap structure on the top side. Gold-ball bump bonds connect the back side of the trap die to an interposer for signal routing from the carrier. Trench capacitors fabricated into the trap die replace area-intensive surface or edge capacitors. Wirebonds in the BGA architecture are moved to the interposer. These last two features allow the trap die to be reduced to only the area required to produce trapping fields. The smaller trap dimensions allow tight focusing of an addressing laser beam for fast single-qubit rotations. Performance of the BGA trap as characterized with 40 Ca + ions is comparable to previous surface-electrode traps in terms of ion heating rate, mode frequency stability, and storage lifetime. We demonstrate two-qubit entanglement operations with 171 Yb + ions in a second BGA trap.

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“…Such advances are significant for scalability as some modern microfabricated traps have nearly 100 DC control electrodes [126] and the filter capacitors and bond pads can consume a large amount of the chip area. Future work in this area includes integration with in-vacuum electronics such as a DAC for electrode voltage control [136].…”

Section: B Microfabricated Asymmetric Trapsmentioning

confidence: 99%

Ion trap architectures and new directions

Siverns

Quraishi

2017

Quantum Inf Process

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Trapped ion technology has seen advances in performance, robustness, and versatility over the last decade. With increasing numbers of trapped ion groups world-wide, a myriad of trap architectures are currently in use. Applications of trapped ions include: quantum simulation, computing and networking, time standards and fundamental studies in quantum dynamics. Design of such traps is driven by these various research aims, but some universally desirable properties have lead to the development of ion trap foundries. The excellent control achievable with trapped ions and the ability to do photonic-readout, has allowed progress on quantum networking using entanglement between remotely situated ion-based nodes. Here we present a selection of trap architectures currently in use by the community and present their most salient characteristics, identifying features particularly suited for quantum networking. We also discuss our own in-house research efforts aimed at long-distance trapped ion-networking.Comment: 30 pages, 28 figures, 6 table

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In-vacuum active electronics for microfabricated ion traps

Cited by 19 publications

References 17 publications

Ion traps fabricated in a CMOS foundry

Ion traps fabricated in a CMOS foundry

Ball-grid array architecture for microfabricated ion traps

Ion trap architectures and new directions

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