2021
DOI: 10.5204/mcj.2750
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In the Shadow of Platforms

Abstract: Introduction This article explores the changing relational quality of “the shadow of hierarchy”, in the context of the merging of platforms with infrastructure as the source of the shadow of hierarchy. In governance and regulatory studies, the shadow of hierarchy (or variations thereof), describes the space of influence that hierarchal organisations and infrastructures have (Héritier and Lehmkuhl; Lance et al.). A shift in who/what casts the shadow of hierarchy will necessarily result in changes to the attenda… Show more

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Cited by 20 publications
(26 citation statements)
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“…The total resistance ( R tot ), a sum of channel resistance (CH‐R), and parasitic resistance (par‐R), achieved from the transfer curves of the channel length‐dependent transfer characteristics at V D = 0.1 V, is shown in Figure S3 and Table S2, Supporting Information. [ 21,22 ] There is a drastic decrement of the R tot after N 2 O annealing as shown in Figure S3a,b, Supporting Information. The channel resistance (CH‐R) and parasitic resistance (par‐R) at V GS = 30 V are 10.06 and 3.85 kΩ, 3.92 and 2.46 kΩ for the AF and N 2 O PFA TFTs respectively.…”
Section: Resultsmentioning
confidence: 94%
“…The total resistance ( R tot ), a sum of channel resistance (CH‐R), and parasitic resistance (par‐R), achieved from the transfer curves of the channel length‐dependent transfer characteristics at V D = 0.1 V, is shown in Figure S3 and Table S2, Supporting Information. [ 21,22 ] There is a drastic decrement of the R tot after N 2 O annealing as shown in Figure S3a,b, Supporting Information. The channel resistance (CH‐R) and parasitic resistance (par‐R) at V GS = 30 V are 10.06 and 3.85 kΩ, 3.92 and 2.46 kΩ for the AF and N 2 O PFA TFTs respectively.…”
Section: Resultsmentioning
confidence: 94%
“…In addition, the ionic radii of Zr 4+ (84 pm) and In 3+ (80 pm) are similar and therefore, the Zr 4+ could replace the In 3+ and resulting in the increment of MO bonding states and reduction of the carrier concentration. [ 4,66 ] Therefore, the ZAO and ZAO/Al 2 O 3 passivated devices exhibit lower μ FE compared with a‐IGZO TFT with no passivation.…”
Section: Resultsmentioning
confidence: 99%
“…With the rapid advancement in high‐speed information display technology, augmented reality (AR) and virtual reality (VR) devices have received increasing attention toward the next‐generation interactive displays to explore 3D visual experiences. [ 1–5 ] The major challenges of AR/VR devices are low power consumption, high‐resolution, fast frame rate, high optical transparency, and low manufacturing cost. [ 2,3,5–9 ] To meet these challenges, an active‐matrix organic light‐emitting diode (AMOLED) display based on organic LED (OLED) has gained increasing interest for AR/VR devices.…”
Section: Introductionmentioning
confidence: 99%
“…Both Equations (37) and (38) admits the same value and we can write 𝛼 A = 𝛼 C = 𝛼 as we have taken the same encoding scheme for both Alice and Charlie. Putting 𝛼 A and 𝛼 C in Equation (36) and integrating, we get that the quantity 𝛼 is the upper bound in a n-local model whose maximum value has to be determined for arbitrary n. We obtain classical bound for n-locality inequality is given by…”
Section: Quantum-violation Of N Locality Inequalitymentioning
confidence: 99%
“…[ 37 ] The device‐independent information processing on quantum networks has also been discussed. [ 38 ] The concept of full network nonlocality is recently introduced [ 39 ] that demonstrates all links in a network distribute nonlocal resources. Self‐testing using a quantum network has also been studied.…”
Section: Introductionmentioning
confidence: 99%