2018
DOI: 10.1039/c8ta01377b
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In3+-doped BiVO4 photoanodes with passivated surface states for photoelectrochemical water oxidation

Abstract: In3+-doped BiVO4 film photoanodes with passivated surface states for efficient photoelectrochemical water oxidation.

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Cited by 86 publications
(50 citation statements)
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“…N‐type semiconductors are usually used as photoanodes for the oxygen evolution reaction (OER) in the process of PEC water splitting, while single n‐type semiconductors tend to exhibit poor surface water oxidation kinetics . Oxygen evolution co‐catalysts (OECs) have been introduced onto photoanodes to improve the rate of oxygen generation .…”
Section: Introductionmentioning
confidence: 99%
“…N‐type semiconductors are usually used as photoanodes for the oxygen evolution reaction (OER) in the process of PEC water splitting, while single n‐type semiconductors tend to exhibit poor surface water oxidation kinetics . Oxygen evolution co‐catalysts (OECs) have been introduced onto photoanodes to improve the rate of oxygen generation .…”
Section: Introductionmentioning
confidence: 99%
“…Both W‐BVO and BiVO 4 exhibit the linear relationship of positive slope, and this result suggests that the doping of W did not alter the nature of n‐type semiconductor of BiVO 4 . For n‐type semiconductors, the capacitance of space charge region ( C SC ) and applied voltage ( E ) takes a relationship as the following formula 37,38 : 1CSC2=2ε0εrNDA2()EEfbkTe=2eε0εr[]1slope …”
Section: Resultsmentioning
confidence: 99%
“…The E fb is evaluated by extrapolating each plot to the x‐axis to get the intercept value. The N d can also be measured by following Equation : trueNd=(2/eϵ0ϵ)4pt[d(1/normalC2)/dV]-1=(2/eϵ0ϵ)4pt[1/slope] …”
Section: Resultsmentioning
confidence: 99%