In<sub>2</sub>O<sub>3</sub>Thin-Film Transistors via Inkjet Printing for Depletion-Load nMOS Inverters

Leppäniemi, Jaakko; Eiroma, Kim; Majumdar, Himadri S.; Alastalo, Ari

doi:10.1109/led.2016.2529183

Cited by 22 publications

(15 citation statements)

References 19 publications

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“…Inkjet printing of the base solution (0 wt % of EG) resulted in poor jetting with unstable droplet trajectory and satellite droplets. However, adequate printing quality could be obtained for large areas, and inkjet-printed In 2 O 3 TFTs and inverters were demonstrated earlier . As a first step toward a more reliable process, the inkjet printing was optimized by using ethylene glycol (EG) as the cosolvent for the In nitrate base solution.…”

Section: Resultsmentioning

confidence: 99%

“…Solution processing of various MO semiconductors, such as binary oxides ZnO, In 2 O 3 , and SnO 2 , ternary oxides In–Zn–O (IZO) and Zn–Sn–O (ZTO), and quaternary oxides IGZO and In–Sn–Zn–O (ITZO), can provide a viable route for the next-generation low-cost MO TFTs especially in flexible applications, , such as biosensor arrays . MO TFTs have already been fabricated both with conventional printing methods such as inkjet, − gravure, and flexographic , printing as well as with novel methods that allow the direct patterning of the solution-processed MO precursor layer. , Flexographic and gravure printing methods are of high interest as they can be applied in a continuous roll-to-roll (R2R) web that can lead into cost-effective mass production as already exploited in R2R-manufactured organic photovoltaics . However, one of the key obstacles in using solution-processed MO semiconductors on low-cost plastic substrates arises from the precursor-to-metal-oxide conversion that typically requires a high temperature of ≥300 °C for attaining an impurity-free MO semiconductor .…”

Section: Introductionmentioning

confidence: 99%

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Far-UV Annealed Inkjet-Printed In₂O₃ Semiconductor Layers for Thin-Film Transistors on a Flexible Polyethylene Naphthalate Substrate

Leppäniemi

Eiroma

Majumdar

et al. 2017

ACS Appl. Mater. Interfaces

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The inkjet-printing process of precursor solutions containing In nitrate dissolved in 2-methoxyethanol is optimized using ethylene glycol as a cosolvent that allows the stabilization of the droplet formation, leading to a robust, repeatable printing process. The inkjet-printed precursor films are then converted to InO semiconductors at flexible-substrate-compatible low temperatures (150-200 °C) using combined far-ultraviolet (FUV) exposure at ∼160 nm and thermal treatment. The compositional nature of the precursor-to-metal oxide conversion is studied using grazing incidence X-ray diffraction (GIXRD), X-ray reflectivity (XRR), and Fourier transform infrared (FTIR) spectroscopy that indicate that amorphous, high density (up to 5.87 g/cm), and low impurity InO films can be obtained using the combined annealing technique. Prolonged annealing (180 min) at 150 °C yields enhancement-mode TFTs with saturation mobility of 4.3 cm/(Vs) and ∼1 cm/(Vs) on rigid Si/SiO and flexible plastic PEN substrates, respectively. This paves the way for manufacturing relatively high-performance, printed metal-oxide TFT arrays on cheap, flexible substrate for commercial applications.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Far-UV Annealed Inkjet-Printed In₂O₃ Semiconductor Layers for Thin-Film Transistors on a Flexible Polyethylene Naphthalate Substrate

Leppäniemi

Eiroma

Majumdar

et al. 2017

ACS Appl. Mater. Interfaces

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“…The oxygen deficiency can be easily controlled by the channel fabrication process conditions such as oxygen partial pressure during deposition/postannealing process, but these conventional techniques are difficult to selectively fabricate D-mode TFT next to E-mode device. To electively fabricate D-mode TFTs, several approaches have been proposed, including the control of channel compositions [31,35], the channel layer thickness control [25], local laser annealing [34], the use of different gate electrode materials, the formation of capping layer [33,40], low-k/high-k double gate oxide, top-gated structure, dual-gated structure [32] etc. Moreover, the fabrication of D-mode TFT by utilizing device degradation processes such as bias stress [30], light-irradiation [47], etc.…”

Section: Oxide-tft-based Nmos Invertermentioning

confidence: 99%

Recent progress of oxide-TFT-based inverter technology

Nomura

2021

Journal of Information Display

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Oxide semiconductor-based thin-film transistor (oxide-TFT) technology have gained significant attention since the innovation of n-channel oxide-TFT using ZnO and amorphous In-Ga-Zn-O (a-IGZO) channels because of their superior device properties including excellent electrical property such as high TFT mobility over > 10 cm 2 /Vs and the low-cost manufacturability originating from the low-temperature processability. Already, n-channel a-IGZO-TFT is widely employed as a TFT pixel switching backplane for several high-performance active-matrix flat-panel displays, and oxide-TFT technology to date is well acknowledged as the best TFT technology for future device applications in the wide range area of electronics such as sensors, Internet of things (IoT), energy-harvesting, medical/bio-interface device, etc. Therefore, the development of large-scale circuit beyond discrete TFT device level becomes increasingly important and is vital to advance the next stage of oxide-TFT technology. In particular, developing oxide-TFT-based inverter device technology is the key for developing several digital and analog circuits. In this paper, the recent progress and challenges in oxide-TFT-based inverter technology, including unipolar NMOS, PMOS, CMOS, and CMOS-like inverters using ambipolar oxide-TFT, are reviewed.

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“…The pretests were done by hand‐transferring the inks from a coated PDMS to a Si/SiO 2 wafer. The 0.1 m ink was found to yield ≈ 15–25 nm thick In 2 O 3 films after annealing at 300 °C, which have earlier shown to exhibit optimal electrical characteristics in printed In 2 O 3 TFTs …”

Section: Methodsmentioning

confidence: 90%

Reverse‐Offset Printing of Metal‐Nitrate‐Based Metal Oxide Semiconductor Ink for Flexible TFTs

Leppäniemi

Sneck

Kusaka

et al. 2019

Adv Elect Materials

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Reverse‐offset printing (ROP) is a novel printing technique capable of forming electronics‐industry‐relevant linewidths (≈1 µm) with good thickness control and sharp edge definition. It is demonstrated that through a controlled oxygen‐plasma treatment, the energy of the surfaces related to the process steps of ROP can be optimized to allow the patterning of metal‐oxide semiconductor layers using a simple printing ink based on metal nitrates dissolved in an organic solvent. The steps of the ROP process are analyzed using surface‐energy measurements and Fourier transform infrared spectra of the ink during drying. Thin‐film transistors (TFTs) fabricated using a roll‐to‐plate ROP of In2O3 semiconductor and evaporated Al source/drain (S/D) contacts show, on average, mobilities of 3.1 and 3.5 cm2 V−1 s−1, and ON/OFF‐ratios up to 108 and 107 on a Si/SiO2 substrate and on a flexible polyimide‐type substrate, respectively. TFTs on the flexible substrate with also the S/D‐contacts printed with ROP using Ag nanoparticle ink exhibit a 1.4 cm2 V−1 s−1 mobility. To demonstrate the scalability of the process, continuous lines of In2O3 are printed using a roll‐to‐roll‐compatible (R2R) ROP with linewidths down to ≈2 µm. This process is expected to lead to miniaturized metal‐oxide circuits as required by flexible high‐resolution sensor arrays and displays.

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In₂O₃Thin-Film Transistors via Inkjet Printing for Depletion-Load nMOS Inverters

Cited by 22 publications

References 19 publications

Far-UV Annealed Inkjet-Printed In₂O₃ Semiconductor Layers for Thin-Film Transistors on a Flexible Polyethylene Naphthalate Substrate

Far-UV Annealed Inkjet-Printed In₂O₃ Semiconductor Layers for Thin-Film Transistors on a Flexible Polyethylene Naphthalate Substrate

Recent progress of oxide-TFT-based inverter technology

Reverse‐Offset Printing of Metal‐Nitrate‐Based Metal Oxide Semiconductor Ink for Flexible TFTs

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In2O3Thin-Film Transistors via Inkjet Printing for Depletion-Load nMOS Inverters

Cited by 22 publications

References 19 publications

Far-UV Annealed Inkjet-Printed In2O3 Semiconductor Layers for Thin-Film Transistors on a Flexible Polyethylene Naphthalate Substrate

Far-UV Annealed Inkjet-Printed In2O3 Semiconductor Layers for Thin-Film Transistors on a Flexible Polyethylene Naphthalate Substrate

Recent progress of oxide-TFT-based inverter technology

Reverse‐Offset Printing of Metal‐Nitrate‐Based Metal Oxide Semiconductor Ink for Flexible TFTs

Contact Info

Product

Resources

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In₂O₃Thin-Film Transistors via Inkjet Printing for Depletion-Load nMOS Inverters

Far-UV Annealed Inkjet-Printed In₂O₃ Semiconductor Layers for Thin-Film Transistors on a Flexible Polyethylene Naphthalate Substrate

Far-UV Annealed Inkjet-Printed In₂O₃ Semiconductor Layers for Thin-Film Transistors on a Flexible Polyethylene Naphthalate Substrate