In_0.53Ga_0.47As FinFET and GAA-FET With Remote-Plasma Treatment

Characteristics of atomic layer deposited Gd2O3 on n-GaN with an AlN layer

“…[12][13][14] It was demonstrated that the plasma enhanced atomic layer deposition (PEALD)-AlN as interfacial passivation layer is benecial to improve the quality of Al 2 O 3 (HfO 2 )/InGaAs interface, featuring good electrical characteristics and low interface trap density. 15,16 Wu et al also observed similar passivation effect in Al 2 O 3 /GaN structure using a 2 nm thick AlN. 17 Due to the easy crystallization of AlN, however, the reverse leakage current become high when employing an AlN layer in the dielectric layer.…”

Sub-10 nm Top Width Nanowire InGaAs Gate-All-Around MOSFETs With Improved Subthreshold Characteristics and Device Reliability

“…S the technology nodes down scaling to the sub-10 nm, suppressing short channel effects (SCEs) has become a strict challenge to overcome the serious threshold voltage (Vth) roll-off, stronger drain induced barrier lowering (DIBL), and drastic subthreshold swing (SS) degradation [1]. To address these issues, gate-all-around (GAA) field-effect transistor has been proposed, and has shown resistant to SCEs [2][3][4][5][6][7]. However, for the Ⅲ-Ⅴ based transistors, severe subthreshold performance degradation is a crucial issue correlated to the strong band to band tunneling (BTBT) of the small bandgap material and a considerable number of traps generated at the high-κ and semiconductor interface which accounted for trap-assisted tunneling (TAT) and Frenkel-Poole emission in scaled gate oxide [8][9][10][11].…”

“…Additionally, comparing to device fabricated without N2 RP passivation, N2 RP treated In0.53Ga0.47As GAA MOSFETs have shown a significant enhancement on SS, DIBL, leakage current, and reliability properties. Details of the process flow can be referenced elsewhere [7]. After source/drain (S/D) regions were defined and processed, nanowire was created following the (010) orientation which has the highest aspect ratio of the In0.53Ga0.47As material [3].…”

“…After the sulfur pretreatment (NH4)2S solution treatment, the PEALD-AlN interfacial passivation layer was deposited and followed by ALD-HfO2 layer deposition with the equivalent oxide thickness (EOT) of 0.8 nm and the surface of the dielectric layers were treated using an in-situ N2 RP process which were performed at plasma power of 150 W for 5 minutes at 250 o C in the same Fiji- swing were observed for the N2 RP treated In0.53Ga0.47As GAA MOSFETs due to the nitrogen passivation effects. Nitrogen atoms generated in the RP process can help to passivate not only the oxygen vacancies in the HfO2 film but also the dangling bond at the interface between the high-κ materials and the III-V semiconductors, contributing to the significant reduction of the Dit [7], [9], [13][14][15]. This may aggressively suppress the Frenkel-Poole emission and trap-assisted tunneling [11].…”

“…Figs.2(a) and (b) show the top view and zoom-in SEM images of a typical In0.53Ga0.47As GAA MOSFETs fabricated. Details of the process flow can be referenced elsewhere[7]. After source/drain (S/D) regions were defined and processed, nanowire was created following the (010) orientation which has the highest aspect ratio of the In0.53Ga0.47As material[3].…”