2017
DOI: 10.1016/j.applthermaleng.2016.11.063
|View full text |Cite
|
Sign up to set email alerts
|

In-situ two-step Raman thermometry for thermal characterization of monolayer graphene interface material

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
9
0

Year Published

2017
2017
2021
2021

Publication Types

Select...
8

Relationship

1
7

Authors

Journals

citations
Cited by 35 publications
(9 citation statements)
references
References 50 publications
0
9
0
Order By: Relevance
“…64 R K is inversely proportional to the work of adhesion, 62,65 and therefore a higher R K resistance is expected between the water and the hydrophobic graphene-coated glass. Moreover, very high values of R K between graphene and SiO 2 interfaces have been measured, 66 including a dramatically fiveorder of magnitude increase in R K when the graphene is not in full contact with glass but presents some corrugation of nmsized height.…”
Section: Asmentioning
confidence: 99%
“…64 R K is inversely proportional to the work of adhesion, 62,65 and therefore a higher R K resistance is expected between the water and the hydrophobic graphene-coated glass. Moreover, very high values of R K between graphene and SiO 2 interfaces have been measured, 66 including a dramatically fiveorder of magnitude increase in R K when the graphene is not in full contact with glass but presents some corrugation of nmsized height.…”
Section: Asmentioning
confidence: 99%
“…Targeted and detailed researches on ITR and phonon scattering are still in lack [32]. It is acknowledged that Raman spectroscopy can reflect the vibration and rotation of molecules and can reflect the phonon vibration mode, which can be used to characterize the thermal conduction and the degree of phonon scattering at the interfaces [33,34]. Yue et al [35] used Raman spectroscopy to study the thermal conduction property of the interfaces between molybdenum disulfide (MoS 2 ) and silica (SiO 2 ) as well as that between MoS 2 and graphene, respectively, finding that the thermal conduction property of the interfaces between MoS 2 and graphene was significantly better than MoS 2 /SiO 2 , because graphene obtains higher λ than SiO 2 , and the heat at the interfaces can be transferred more efficiently.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, it needs to be cautioned that the measured value is composed of interfacial resistance between Si and SiO2, thermal resistance of SiO2 layer, and interfacial resistance between graphene and SiO2. [36] 3.2 Two-step Raman method for in-plane thermal conductivity Most characterizations solely focus on either in-plane transport or cross-plane interfacial transport, while only few researchers consider the comprehensive transport for the interface materials. In electronic applications, the interface heat dissipation and in-plane thermal transport are coupled when a heat spot exists.…”
Section: Raman Penetrating Methods For Interface Thermal Resistancementioning
confidence: 99%
“…Targeting this gap, a two-step approach based on Raman is developed for localized measurement of both thermal conductivity and interfacial thermal conductance. [36] The two-step Raman involves the 1 st step on Joule heating Raman penetration method to characterize interfacial thermal resistance as introduced above, and the 2 nd step is about in-plane thermal conductivity measurement based on laser heating.…”
Section: Raman Penetrating Methods For Interface Thermal Resistancementioning
confidence: 99%