In situ TEM study of κ→β and κ→γ phase transformations in Ga2O3

Ga2O3polymorphs: tailoring the epitaxial growth conditions

“…37 Very recently, Cora et al performed TEM analysis on e-Ga 2 O 3 subjected to thermal treatments at different heating rates and they were able to detect in real time the phase transition. 38 Annealing experiments up to 1000 1C were performed either in situ in a vacuum inside the TEM chamber, or ex situ in ambient air. The TEM observations provided a real time view of the atomistic re-arrangement at the basis of the k to b phase transition.…”

Comprehensive Raman study of orthorhombic κ/ε-Ga2O3 and the impact of rotational domains

“…The κ phase was found to thermally transition to β only under annealing at high temperatures T > 700 − 800 • C, 14,35 allowing for applications in devices requiring sufficiently high working temperatures. To date, the orthorhombic phase has been grown successfully 36 on a number of different substrates, including Al 2 O 3 (0001), GaN (0001), AlN (0001), 6H-SiC or β -Ga 2 O 3 (201), using halide vapour phase epitaxy, 14,37,38 atomic layer deposition, 39 metal-organic chemical vapor deposition, 15,18,22,27,30,35,37,[39][40][41][42][43][44] metal-organic vapor phase epitaxy, 1,[45][46][47][48] mist CVD 16,17,32,33,49,50 , plasma-assisted molecular beam epitaxy 51,52 , laser molecular beam epitaxy, 21,53 and pulsed laser deposition 12,13,24,[54][55][56][57] .…”

TEM and DFT study of basal-plane inversion boundaries in SnO2-doped ZnO

“…In polycrystalline thin films IBs are not easy to detect, and their preparation would necessitate a plan-view TEM sample preparation [51]. More readily, IBs are observed in diverse nanostructures.…”