2022
DOI: 10.1016/j.solmat.2022.112040
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In-situ surface patch-passivation via phosphorus oxygen bond for efficient PbS colloidal quantum dot infrared solar cells

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Cited by 3 publications
(2 citation statements)
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“…The sputtered ZnO device achieves a champion device with 10.41 and 0.85% PCE under AM 1.5G and 1100 nm filtered illumination, respectively, which is advanced among infrared PbS CQDs solar cells (Table S1). These results also imply that sputtered ZnO effectively suppresses the interface recombination and improves device performance.…”
Section: Resultsmentioning
confidence: 92%
“…The sputtered ZnO device achieves a champion device with 10.41 and 0.85% PCE under AM 1.5G and 1100 nm filtered illumination, respectively, which is advanced among infrared PbS CQDs solar cells (Table S1). These results also imply that sputtered ZnO effectively suppresses the interface recombination and improves device performance.…”
Section: Resultsmentioning
confidence: 92%
“…After adding DMSO, the dominant peak position corresponding to the Pb = S bond did not change, while the peak position corresponding to the Pb = O bond shifted to 138.38 and 143.18 eV, and the binding energy of the Pb = O bond was transferred to a lower energy. This is mainly due to the increased electron density of Pb atoms upon coordination, which is consistent with previous research results, further confirming the successful combination of DMSO as a patch ligand with PbS QDs. Moreover, it can be observed that the peak area proportion corresponding to the Pb = O bond in PbS-DMSO is significantly reduced compared to that in PbS QDs, indicating that DMSO has a certain passivation effect after binding to PbS QDs.…”
Section: Resultsmentioning
confidence: 99%