In-situ revealing the degradation mechanisms of Pt film over 1000 °C

Ma, Dongfeng; Mao, Shengcheng; Teng, Jun; Wang, Xinliang; Li, Xiaochen; Jin, Ning; Li, Zhipeng; Zhang, Qing; Tian, Zhiyong; Wang, Menglong; Zhang, Ze; Han, Xiaodong

doi:10.1016/j.jmst.2021.03.064

Cited by 11 publications

(2 citation statements)

References 56 publications

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“…Several approaches have been proposed for the mitigation of delamination and recrystallization of noble metal thin films at high temperatures: (1) the deposition of bilayer structures with an adhesion layer (Ti, Ta, Cr, Zr) between the substrate and the conductive layer [17][18][19][20][21][22][23][24] or the use of an oxidizing atmosphere during the initial stage of the noble metal sputtering [25,26], (2) the sputtering of a protective dielectric layer (Si, Al 2 O 3 , Si 3 N 4 , TiO 2 , SiAlON, SiO 2 + Si 3 N 4 ) onto the top surface of metal layer [16,24,[27][28][29][30], (3) alloying platinum with metals that have higher melting point (Ir, Rh) [24,[31][32][33][34], and (4) the incorporation of refractory oxides (ZrO 2 , HfO 2 , Nb 2 O 3 , Y 2 O 3 , RuO 2 ), acting as anchors to stabilize the grain boundaries of the metal phase [24,33,[35][36][37][38]. All these approaches require recrystallization annealing at temperatures exceeding the operating temperature range of thin-film devices [17,39].…”

Section: Introductionmentioning

confidence: 99%

Towards High-Temperature MEMS: Two-Step Annealing Suppressed Recrystallization in Thin Multilayer Pt-Rh/Zr Films

Pleshakov,

Kalinin,

Ivanov

et al. 2023

Micromachines

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Platinum-based thin films are widely used to create microelectronic devices operating at temperatures above 500 °C. One of the most effective ways to increase the high-temperature stability of platinum-based films involves incorporating refractory metal oxides (e.g., ZrO2, HfO2). In such structures, refractory oxide is located along the metal grain boundaries and hinders the mobility of Pt atoms. However, the effect of annealing conditions on the morphology and functional properties of such multiphase systems is rarely studied. Here, we show that the two-step annealing of 250-nm-thick Pt-Rh/Zr multilayer films instead of the widely used isothermal annealing leads to a more uniform film morphology without voids and hillocks. The composition and morphology of as-deposited and annealed films were investigated using X-ray diffraction and scanning electron microscopy, combined with energy-dispersive X-ray spectroscopy. At the first annealing step at 450 °C, zirconium oxidation was observed. The second high-temperature annealing at 800–1000 °C resulted in the recrystallization of the Pt-Rh alloy. In comparison to the one-step annealing of Pt-Rh and Pt-Rh/Zr films, after two-step annealing, the metal phase in the Pt-Rh/Zr films has a smaller grain size and a less pronounced texture in the <111> direction, manifesting enhanced high-temperature stability. After two-step annealing at 450/900 °C, the Pt-Rh/Zr thin film possessed a grain size of 60 ± 27 nm and a resistivity of 17 × 10−6 Ω·m. The proposed annealing protocol can be used to create thin-film MEMS devices for operation at elevated temperatures, e.g., microheater-based gas sensors.

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Section: Introductionmentioning

confidence: 99%

Towards High-Temperature MEMS: Two-Step Annealing Suppressed Recrystallization in Thin Multilayer Pt-Rh/Zr Films

Pleshakov,

Kalinin,

Ivanov

et al. 2023

Micromachines

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show abstract

“…The direct deposition of Pt on oxide or nitride substrates results in the low stability of such systems at high temperatures [ 26 , 27 ] due to poor adhesion leading to the delamination of the metal from the substrate [ 27 , 28 ]. The chemical interaction of Pt with silicon-based substrates [ 29 , 30 ] is also possible.…”

Section: Introductionmentioning

confidence: 99%

Long-Term Operational Stability of Ta/Pt Thin-Film Microheaters: Impact of the Ta Adhesion Layer

et al. 2022

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Microheaters with long-term stability are crucial for the development of a variety of microelectronic devices operated at high temperatures. Structured Ta/Pt bilayers, in which the Ta sublayer ensures high adhesion of the Pt resistive layer, are widely used to create microheaters. Herein, a comprehensive study of the microstructure of Ta/Pt films using high-resolution transmission electron microscopy with local elemental analysis reveals the twofold nature of Ta after annealing. The main fraction of Ta persists in the form of tantalum oxide between the Pt resistive layer and the alumina substrate. Such a sublayer hampers Pt recrystallization and grain growth in bilayered Ta/Pt films in comparison with pure Pt films. Tantalum is also observed inside the Pt grains as individual Ta nanoparticles, but their volume fraction is only about 2%. Microheaters based on the 10 nm Ta/90 nm Pt bilayers after pre-annealing exhibit long-term stability with low resistance drift at 500 °C (less than 3%/month).

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Tunable Electromagnetic Performance of Pt–Si–O Films in Mid‐Infrared and Microwave Spectrums

Luo,

Fan,

et al. 2024

Adv Eng Mater

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Electromagnetic performance regulation in mid‐infrared (MIR) and microwave (MW) spectrums is crucially significant, which can be achieved by heterophase introduction and structural manufacturing. In this work, Si‐O amorphous phase is introduced into Pt film by magnetron co‐sputtering technique, the film thickness is optimized by adjusting deposition time. After annealing treatment, a double‐layered structure is constructed with the migration and growth of Pt crystals, in which the lower layer is composed of Pt coarse grains while the upper layer is Si‐O amorphous phase with embedded Pt fine grains. Furthermore, due to the thickness difference, diverse kinds of structural patterns (arrays or mesh) can be obtained with the solid‐state dewetting of the lower layer. According to the increasing thickness, the infrared emissivity can decrease from 0.67 to 0.25 (8–14 μm), demonstrating a great decline of apparent temperature of 162.9 °C when the background is 300 °C. And the microwave transmissivity also exhibits tremendous variation over 90% (from 96% to 5%), realizing the transformation from transmitting to shielding.

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In-situ revealing the degradation mechanisms of Pt film over 1000 °C

Cited by 11 publications

References 56 publications

Towards High-Temperature MEMS: Two-Step Annealing Suppressed Recrystallization in Thin Multilayer Pt-Rh/Zr Films

Towards High-Temperature MEMS: Two-Step Annealing Suppressed Recrystallization in Thin Multilayer Pt-Rh/Zr Films

Long-Term Operational Stability of Ta/Pt Thin-Film Microheaters: Impact of the Ta Adhesion Layer

Tunable Electromagnetic Performance of Pt–Si–O Films in Mid‐Infrared and Microwave Spectrums

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