In situ photoemission study of the contact formation of (Ba,Sr)TiO3 with Cu and Au

Schafranek, Robert; Klein, Andreas

doi:10.1016/j.ssi.2006.03.021

Cited by 21 publications

(20 citation statements)

References 17 publications

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“…No contaminations were observed after any step, which is justified from XPS survey spectra, as those shown in Fig. 1 The valence band spectra of the annealed SrTiO 3 :Nb single crystal recorded by using monochromated Al K␣ ͑see 40 and in good agreement with literature. 20,24,41 The valence band maxima ͑VBM͒ of the spectra are determined by linear extrapolation of the leading edge.…”

Section: Methodssupporting

confidence: 80%

“…Their binding energy with respect to the Fermi energy, which is calibrated as the zero of the binding energy scale, is given by E F − E VB = 3.25Ϯ 0.05 eV, which is again in good agreement with previous values. 40 As the band gap of SrTiO 3 amounts to E g = 3.2 eV, 4 this value corresponds to a Fermi level position at the conduction band minimum. Such a Fermi level position has to be expected for the given Nb doping level ͑see the discussion in Sec.…”

Section: Methodsmentioning

confidence: 99%

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Barrier height at(Ba,Sr)TiO3/Ptinterfaces studied by photoemission

et al. 2008

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The interface formation of Nb-doped SrTiO 3 single crystals and ͑Ba, Sr͒TiO 3 thin films with Pt has been studied by using photoelectron spectroscopy with in situ sample preparation. For the single crystal sample, a Schottky barrier height for electrons of 0.5-0.6 eV is determined after deposition of Pt in vacuum environment. After annealing in 0.05 Pa oxygen pressure, a strong increase in the barrier height to Ն1.2 eV is observed. X-ray induced photovoltages of up to 0.7 eV are observed in this case and have to be taken into account for a proper determination of the barrier height. A subsequent annealing in vacuum reduces the barrier again. Hence, the barrier height can be reversibly switched between an oxidized state with a large barrier height and a reduced state with a low barrier height. Quantitative analysis of the barrier heights indicates that the changes are related to the changes of interfacial defect concentration. Due to the occurrence of a Ti 3+ related signal, the defects are identified as oxygen vacancies. The same effects are observed at interfaces between Pt and ͑Ba, Sr͒TiO 3 thin films with a smaller absolute value of the barrier height in the oxidized state of ϳ1 eV. Deposition of ͑Ba, Sr͒TiO 3 onto a metallic Pt substrate also results in a barrier height of 1.0 eV.

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Section: Methodssupporting

confidence: 80%

Section: Methodsmentioning

confidence: 99%

Barrier height at(Ba,Sr)TiO3/Ptinterfaces studied by photoemission

et al. 2008

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“…Such a behavior has also been observed during Cu and Au deposition onto (Ba,Sr)TiO 3 [21]. The oxygen signal after Cu deposition is still observed after complete attenuation of the Pb +II , Ti, and Zr core levels, clearly indicating that it is not related to PZT, as might have been the case e.g.…”

Section: Resultssupporting

confidence: 57%

“…It has been suggested that the decomposition of the substrate is caused by the heat of condensation of the metal atoms during deposition, which can be as high as ∼ 4 eV [20]. Chemically reactive interfaces have also been observed during deposition of Cu and Au onto (Ba,Sr)TiO 3 [21]. The chemically reduced PZT substrate surface can be reversibly oxidized and reduced by post-deposition treatments under oxidizing or reducing conditions, which is accompanied by a reversible change of the barrier height from Φ B,p = 1.1 eV (oxidizing conditions) to 2.2 eV (reducing conditions) [16].…”

Section: Introductionmentioning

confidence: 99%

Reduction-induced Fermi level pinning at the interfaces between Pb(Zr,Ti)O₃ and Pt, Cu and Ag metal electrodes

Chen¹,

Schafranek²,

Wu³

et al. 2011

J. Phys. D: Appl. Phys.

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Abstract.The interface formation between Pb(Zr,Ti)O 3 and Pt, Cu and Ag was studied using in situ photoelectron spectroscopy. A strong interface reaction and a reduction of the substrate surface is observed for all three interfaces as evidenced by the appearance of metallic Pb species. Despite the different work function of the metals, nearly identical barrier heights are found with E F − E VB = 1.6 ± 0.1 eV, 1.8 ± 0.1 eV and 1.7 ± 0.1 eV of the as-prepared interfaces with Pt, Cu and Ag, respectively. The barrier heights are characterized by a strong Fermi level pinning, which is attributed to an oxygen deficient interface induced by the chemical reduction of Pb(Zr,Ti)O 3 during metal deposition.

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“…Studied interfaces include (Ba,Sr)TiO 3 /Pt, 21,22,23 (Ba,Sr)TiO 3 /Au and (Ba,Sr)TiO 3 /Cu interfaces. 24 In this work the interface formation between BST and RuO 2 is studied via photoelectron spectroscopy. The BST and RuO 2 thin film preparation and sample analysis are all carried out in the same ultra high vacuum (UHV) system (in situ).…”

Section: Introductionmentioning

confidence: 99%

In situ photoelectron study of the (Ba,Sr)TiO3/RuO2 contact formation

Schafranek

Schaffner

Klein

2010

Journal of the European Ceramic Society

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In situ photoemission study of the contact formation of (Ba,Sr)TiO3 with Cu and Au

Cited by 21 publications

References 17 publications

Barrier height at(Ba,Sr)TiO3/Ptinterfaces studied by photoemission

Barrier height at(Ba,Sr)TiO3/Ptinterfaces studied by photoemission

Reduction-induced Fermi level pinning at the interfaces between Pb(Zr,Ti)O₃ and Pt, Cu and Ag metal electrodes

In situ photoelectron study of the (Ba,Sr)TiO3/RuO2 contact formation

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In situ photoemission study of the contact formation of (Ba,Sr)TiO3 with Cu and Au

Cited by 21 publications

References 17 publications

Barrier height at(Ba,Sr)TiO3/Ptinterfaces studied by photoemission

Barrier height at(Ba,Sr)TiO3/Ptinterfaces studied by photoemission

Reduction-induced Fermi level pinning at the interfaces between Pb(Zr,Ti)O3 and Pt, Cu and Ag metal electrodes

In situ photoelectron study of the (Ba,Sr)TiO3/RuO2 contact formation

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Reduction-induced Fermi level pinning at the interfaces between Pb(Zr,Ti)O₃ and Pt, Cu and Ag metal electrodes