In-situ PECVD-based stoichiometric SiO2 layer for semiconductor devices

Pham, Duy Phong; Kim, Hongrae; Choi, Jong-Woo; Oh, Dae Jong; Chung, Yunchul; Jeon, Wonbae; Jo, Jungyun; Dao, Vinh Ai; Dhungel, Suresh Kumar; Yi, Junsin

doi:10.1016/j.optmat.2023.113536

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In-situ PECVD-based stoichiometric SiO2 layer for semiconductor devices

Cited by 6 publications

References 23 publications

Recent Advances in Gate Dielectrics for Enhanced Leakage Current Management and Device Performance

Recent Advances in Gate Dielectrics for Enhanced Leakage Current Management and Device Performance

Ecofriendly silicon dioxide chemical vapor deposition for semiconductor devices using nitrogen monoxide gas source

Effect on passivation mechanism and properties of HfO2/crystalline-Si interface under different annealing atmosphere

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