In situ optical monitoring of the decomposition of GaN thin films

Rebey, A.; Boufaden, T.; Jani, B. El

doi:10.1016/s0022-0248(99)00081-0

Cited by 86 publications

(49 citation statements)

References 13 publications

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“…Thus, point-measurement techniques such as spectroscopic ellipsometry, 1-4 phase-sensitive ellipsometry, 5 laser reflectometry, 6,7 multi-beam interferometry, 8,9 and emission spectroscopy 10,11 have been successfully implemented. Typically, the structure height is measured at a single point or region of interest and information across the wafer is inferred assuming the process is uniform.…”

Section: Introductionmentioning

confidence: 99%

Optically monitoring and controlling nanoscale topography during semiconductor etching

et al. 2012

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We present epi-diffraction phase microscopy (epi-DPM) as a non-destructive optical method for monitoring semiconductor fabrication processes in real time and with nanometer level sensitivity. The method uses a compact Mach-Zehnder interferometer to recover quantitative amplitude and phase maps of the field reflected by the sample. The low temporal noise of 0.6 nm per pixel at 8.93 frames per second enabled us to collect a three-dimensional movie showing the dynamics of wet etching and thereby accurately quantify non-uniformities in the etch rate both across the sample and over time. By displaying a gray-scale digital image on the sample with a computer projector, we performed photochemical etching to define arrays of microlenses while simultaneously monitoring their etch profiles with epi-DPM.

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Section: Introductionmentioning

confidence: 99%

Optically monitoring and controlling nanoscale topography during semiconductor etching

et al. 2012

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“…The growth, using this apparatus, is real time monitored by laser beam reflectivity [6,10,11]. As an example a typical recording of the reflectivity signal during the growth of successive GaN epitaxial layers for different filament temperatures (T f ) is shown in the inset of Fig.…”

Section: Resultsmentioning

confidence: 99%

The GaN Growth by a Hot Filament Metalorganic Vapor Phase Deposition Technique

Boufaden¹,

Rebey²,

Halidou³

et al. 1999

phys. stat. sol. (a)

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“…Hydrogen and nitrogen are also said to have an influence on growth. Rebey et al showed that increased hydrogen enhances GaN decomposition by gallium surface desorption above 830 ° C at atmospheric pressure, while nitrogen and ammonia suppress decomposition [18]. Koleske et al showed that H 2 pressure also affects decomposition [19].…”

Section: Discussionmentioning

confidence: 99%

Synthesis and Growth of Gallium Nitride by the Chemical Vapor Reaction Process (CVRP)

Callahan

Harris

Suscavage

et al. 1999

MRS Internet j. nitride semicond. res.

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A new process for synthesis and bulk crystal growth of GaN is described. GaN single crystal c-plane platelets up to 9mm by 2mm by 100 µ m thick have been grown by the Chemical Vapor Reaction Process (CVRP). The reaction between gallium and a nitrogen precursor is produced by sublimation of solid ammonium chloride in a carrier gas, which passes over gallium at a temperature of approximately 900 ° C at near atmospheric pressures. Growth rates for the platelets were 25-100 µ m/ hr in the hexagonal plane. Seeded growth in the c-direction was also accomplished by re-growth on previously grown c-plane platelets. The crystals were characterized by X-ray diffractometry, atomic force microscopy, secondary ion mass spectrometry, inert gas fusion, and room temperature Hall effect and resistivity measurements.

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In situ optical monitoring of the decomposition of GaN thin films

Cited by 86 publications

References 13 publications

Optically monitoring and controlling nanoscale topography during semiconductor etching

Optically monitoring and controlling nanoscale topography during semiconductor etching

The GaN Growth by a Hot Filament Metalorganic Vapor Phase Deposition Technique

Synthesis and Growth of Gallium Nitride by the Chemical Vapor Reaction Process (CVRP)

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