In situ observation of two-step growth of AlN on sapphire using high-temperature metal–organic chemical vapour deposition

Sun, Xiaojuan; Li, Dabing; Chen, Yiren; Song, Hang; Jiang, Hong; Li, Zhiming; Miao, Guoqing; Zhang, Zhiwei

doi:10.1039/c3ce40755a

Cited by 77 publications

(90 citation statements)

References 27 publications

(27 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure 2(b) shows the ω -scan rocking curve of the ALA-treated AlN layer with a thickness of only ~30 nm. The full width at half-maximum (FWHM) of XRD ω -scan rocking curves is only 144 arcsec, which is close to the typical value of a thick (~1 μm) AlN epilayer grown by MOCVD at a high temperature of 900~1100 °C27. Hence, Fig.…”

Section: Resultssupporting

confidence: 71%

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing

Shih

Lee

Kao

et al. 2017

Sci Rep

View full text Add to dashboard Cite

Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future.

show abstract

Section: Resultssupporting

confidence: 71%

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing

Shih

Lee

Kao

et al. 2017

Sci Rep

View full text Add to dashboard Cite

show abstract

“…To investigate the initial stages of growth for sp 2 The substrates were cleaned following the RCA procedure that includes removal of organic contaminants by water solution of ammonia and hydrogen peroxide followed by removal of inorganic contaminants by water solution of hydrochloric acid and hydrogen peroxide 28 . Prior to the thin film deposition both type of substrates were in situ pretreated, where an AlN buffer layer was formed on -Al 2 O 3 by nitridation at the applied growth temperature using ammonia at a total concentration 10 % in hydrogen during 10 minutes 24 or by the introduction of silane into the reactor at the temperature of 950 °C in order to improve the 6H-SiC substrate surface morphology 29 .…”

Section: Methodsmentioning

confidence: 99%

Initial stages of growth and the influence of temperature during chemical vapor deposition of sp2-BN films

Chubarov

Pedersen

Högberg

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

Knowledge of the structural evolution of thin films, starting by the initial stages of growth is important to control the quality and properties of the film. We present a study on the initial stages of growth and the temperature influence on the structural evolution of substrates; instead r-BN nucleates and grows directly with a mixed layer-by-layer and island growth mode. These differences may be caused by differences in substrate surface 2 temperature due to different thermal conductivities of the substrate materials. These results add to the understanding of the growth process of sp 2 -BN employing CVD.

show abstract

“…A 20 nm-thick low-temperature (LT) AlN nucleation layer was first deposited on SiC at 950°C. Then a 100 nm-thick high-temperature (HT) AlN nucleation layer epifilm was deposited on LT-AlN nucleation layer at 1,100°C [9]. Then the un-doped 3 lm GaN was grown at 1,050°C and 190 torr with a V/III ration of 1270.…”

Section: Methodsmentioning

confidence: 99%

The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal organic chemical vapor deposition

Tao

Liang

Xia

et al. 2014

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal organic chemical vapor deposition (MOCVD) was investigated. The property of GaN epilayer was investigated by atomic force microscopy, X-ray diffraction, low-temperature (10 K) photoluminescence and the Raman scattering. It is found that, as the spacing between showerhead and susceptor decreased, the growth rate increased and the tensile stress decreased. This result may be useful to control the stress in GaN thin films grown on silicon carbide substrate by MOCVD.

show abstract

In situ observation of two-step growth of AlN on sapphire using high-temperature metal–organic chemical vapour deposition

Cited by 77 publications

References 27 publications

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing

Initial stages of growth and the influence of temperature during chemical vapor deposition of sp2-BN films

The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal organic chemical vapor deposition

Contact Info

Product

Resources

About