In situ monitoring of MOVPE growth by combined spectroscopic ellipsometry and reflectance-difference spectroscopy

Ebert, M.; Bell, K.A.; Yoo, S. D.; Flock, K.; Aspnes, D. E.

doi:10.1016/s0040-6090(99)00920-7

Cited by 16 publications

(11 citation statements)

References 19 publications

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“…1 [9,10]. The rotating-polarizer ellipsometer (RPE) and its principles of operation are similar to those of the system previously described by Collins and co-workers [11].…”

Section: Instrumentationmentioning

confidence: 90%

“…The improvement results from aligning the typical direction of arc wander (around the electrodes) to the long dimension of the slit, thereby minimizing intensity fluctuations at the detector. Second, we found it necessary to modify the spindle to allow for dynamic adjustment of sample wobble during operation [9,10]. We found that wobble effects depend on the rotational speed (typically 1000 rpm) and temperature.…”

Section: Instrumentationmentioning

confidence: 99%

“…If not corrected, this wobble also translates into an intensity variation at the detector, which is easily recognized since it appears as the third harmonic of the polarizer rotation frequency, as discussed below. Both improvements are discussed in detail elsewhere [9,10,12].…”

Section: Instrumentationmentioning

confidence: 99%

“…Here, we describe the real-time monitoring and control work taking place in this area at NC State University [9,10], which in many cases is complementary to the work taking place in the Richter group at TU Berlin. Specifically, we have developed and implemented the first optical configuration that obtains both RDS and SE data simultaneously with a single optical beam.…”

Section: Introductionmentioning

confidence: 99%

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Investigation and Control of MOVPE Growth by Combined Spectroscopic Ellipsometry and Reflectance-Difference Spectroscopy

Ebert

Bell

Flock

et al. 2001

phys. stat. sol. (a)

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The detailed characterization of epitaxial growth by metal organic vapor phase epitaxy (MOVPE) and its closed-loop feedback control at the sample level require a combination of thin-film, nearsurface, and surface-sensitive techniques to determine layer thicknesses and compositions, the composition of the most recently deposited material, and surface chemistry, respectively. These data can be obtained nondestructively by spectroscopic ellipsometry (SE) and reflectance-difference (-anisotropy) spectroscopy (RDS/RAS). We describe the first unified optical system, basically a rotating-polarizer ellipsometer (RPE) integrated within a modified commercial rotating-sample MOVPE reactor, that performs both SE and RDS simultaneously in a single optical path. We provide examples of its use, showing in particular that GaP can intermix with Si during the initial stages of heteroepitaxy, and demonstrating sample-driven closed-loop feedback control of epitaxy through the fully automatic deposition of an In x Ga 1--x P parabolic quantum well. These results illustrate capabilities of the presented configuration and its potential for future use.

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“…1 [9,10]. The rotating-polarizer ellipsometer (RPE) and its principles of operation are similar to those of the system previously described by Collins and co-workers [11].…”

Section: Instrumentationmentioning

confidence: 90%

Section: Instrumentationmentioning

confidence: 99%

Section: Instrumentationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Investigation and Control of MOVPE Growth by Combined Spectroscopic Ellipsometry and Reflectance-Difference Spectroscopy

Ebert

Bell

Flock

et al. 2001

phys. stat. sol. (a)

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“…Nowadays, in situ spectroscopic ellipsometry (SE) is widely acknowledged as an analytical tool providing realtime monitoring on film growth processes, [19][20][21][22][23][24][25][26] since it is a nondestructive, versatile technique easily implemented in a deposition setup. With respect to the above-mentioned techniques, SE allows the real-time, direct determination of both layer thickness and optical constants 27 of the growing layer.…”

Section: Introductionmentioning

confidence: 99%

Initiated-chemical vapor deposition of organosilicon layers: Monomer adsorption, bulk growth, and process window definition

Aresta

Palmans

Sanden

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Organosilicon layers have been deposited from 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (V 3 D 3 ) by means of the initiated-chemical vapor deposition (i-CVD) technique in a deposition setup, ad hoc designed for the engineering of multilayer moisture permeation barriers. The application of Fourier transform infrared (FTIR) spectroscopy shows that the polymerization proceeds through the scission of the vinyl bond and allows quantifying the degree of conversion of vinyl groups, which is found to be larger than 80% for all the deposited layers. In situ real-time spectroscopic ellipsometry (SE) allows following all the i-CVD growth stages, i.e., from the initial monomer adsorption to the layer bulk growth. Finally, the combination of SE and FTIR has allowed defining the process window for the deposition of stable and highly cross-linked poly(V 3 D 3 ) layers by tuning a key process parameter, i.e. the surface monomer adsorption.

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High Efficiency III–V Solar Cells

Podraza

2018

Spectroscopic Ellipsometry for Photovoltaics

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In situ monitoring of MOVPE growth by combined spectroscopic ellipsometry and reflectance-difference spectroscopy

Cited by 16 publications

References 19 publications

Investigation and Control of MOVPE Growth by Combined Spectroscopic Ellipsometry and Reflectance-Difference Spectroscopy

Investigation and Control of MOVPE Growth by Combined Spectroscopic Ellipsometry and Reflectance-Difference Spectroscopy

Initiated-chemical vapor deposition of organosilicon layers: Monomer adsorption, bulk growth, and process window definition

High Efficiency III–V Solar Cells

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