“…9 For In 2 O 3 -based TEA gas-sensing material, the current research mainly focuses on controlling the morphology of In 2 O 3 , 10 doping with noble metals, 11 forming heterojunctions with other oxides, 12 etc. , wherein, the loading of Pd nanoparticles (NPs) is an effective method for modifying In 2 O 3 , where Pd NPs can influence the overall energy and catalytic activity, while also controlling the number of charge carriers (electrons and holes) in the suctor, 13 lowering the activation energy of the system and promoting electron transfer, 14–16 and ultimately improve the comprehensive gas sensing performance of In 2 O 3 . 17–19 In addition to the catalytic effect of Pd NPs that can effectively improve the gas sensitivity of In 2 O 3 , PdO also plays an important role in improving the gas sensitivity of In 2 O 3 , PdO is a P-type semiconductor, it is easy to form a P–N heterojunction when combined with N-type semiconductor In 2 O 3 , which will increase the thickness of the electron depletion layer (EDL) of the material and form a carrier transport channel, which will help to provide more adsorption and reaction sites, and ultimately improve the gas sensing performance.…”