2023
DOI: 10.1016/j.jhazmat.2023.131184
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In-situ mechanochemically tailorable 2D gallium oxyselenide for enhanced optoelectronic NO2 gas sensing at room temperature

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Cited by 41 publications
(35 citation statements)
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“…Understanding the relationship between structure, properties, and gas sensing performance is highly necessary for the preparation of high-performance gas-sensitive sensors. Under the action of heat to provide sufficient reaction activation energy, the oxygen (O 2 ) molecules will capture electrons (e – ) from the conduction band minimum (CBM) of D-WO 3 -(002) and create the electron-depletion layer ( L d ) in the sensing layer, thus causing an increase in electrical resistance. As shown in Figure , the Fermi energy level position of D-WO 3 -(002) is in closer proximity to the CBM compared to WO 3 , resulting in a higher concentration of free electrons. ,, Consequently, a thicker L d was formed on the surface of the sensing layer. When the acetone is injected, the oxygen species generated on the surface of the sensing layer will rapidly react with the acetone vapor, which will cause an electron reflux from the depletion layer, and result in the reduction of the resistance value.…”
Section: Resultsmentioning
confidence: 99%
“…Understanding the relationship between structure, properties, and gas sensing performance is highly necessary for the preparation of high-performance gas-sensitive sensors. Under the action of heat to provide sufficient reaction activation energy, the oxygen (O 2 ) molecules will capture electrons (e – ) from the conduction band minimum (CBM) of D-WO 3 -(002) and create the electron-depletion layer ( L d ) in the sensing layer, thus causing an increase in electrical resistance. As shown in Figure , the Fermi energy level position of D-WO 3 -(002) is in closer proximity to the CBM compared to WO 3 , resulting in a higher concentration of free electrons. ,, Consequently, a thicker L d was formed on the surface of the sensing layer. When the acetone is injected, the oxygen species generated on the surface of the sensing layer will rapidly react with the acetone vapor, which will cause an electron reflux from the depletion layer, and result in the reduction of the resistance value.…”
Section: Resultsmentioning
confidence: 99%
“…Compared with other excellent carbon composites, the research on DCI composite sensing functional materials is rarely reported. In future research, we can consider combining the good dispersion of DCI with other functional materials, such as emerging two-dimensional materials, 100–104 to improve the sensing performance of DCI-based sensors and expand their new sensing applications.…”
Section: Conclusion and Outlooksmentioning
confidence: 99%
“…9 For In 2 O 3 -based TEA gas-sensing material, the current research mainly focuses on controlling the morphology of In 2 O 3 , 10 doping with noble metals, 11 forming heterojunctions with other oxides, 12 etc. , wherein, the loading of Pd nanoparticles (NPs) is an effective method for modifying In 2 O 3 , where Pd NPs can influence the overall energy and catalytic activity, while also controlling the number of charge carriers (electrons and holes) in the suctor, 13 lowering the activation energy of the system and promoting electron transfer, 14–16 and ultimately improve the comprehensive gas sensing performance of In 2 O 3 . 17–19 In addition to the catalytic effect of Pd NPs that can effectively improve the gas sensitivity of In 2 O 3 , PdO also plays an important role in improving the gas sensitivity of In 2 O 3 , PdO is a P-type semiconductor, it is easy to form a P–N heterojunction when combined with N-type semiconductor In 2 O 3 , which will increase the thickness of the electron depletion layer (EDL) of the material and form a carrier transport channel, which will help to provide more adsorption and reaction sites, and ultimately improve the gas sensing performance.…”
Section: Introductionmentioning
confidence: 99%