In situ measurements and growth kinetics of silicon carbide chemical vapor deposition from methyltrichlorosilane

Sone, Hayato; Kaneko, Tsutomu; Miyakawa, Nobuaki

doi:10.1016/s0022-0248(00)00616-3

Cited by 54 publications

(38 citation statements)

References 18 publications

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“…Under such circumstances, most of the MTS precursor supplied to the tube reactor passed over the substrate and only a small amount diffused to the substrate. Thus, the growth of NWs is determined by the diffusion of precursors to the substrate, i.e., the growth of NWs is in a diffusioncontrolled regime whereas it is in a reactioncontrolled regime at atmospheric pressure [15]. In a diffusion-controlled regime, the atoms attached to the substrate can have sufficient time to rearrange to their thermodynamically stable position.…”

Section: Resultsmentioning

confidence: 99%

Growth and modulation of silicon carbide nanowires

Choi

Seong

Lee

et al. 2004

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 99%

Growth and modulation of silicon carbide nanowires

Choi

Seong

Lee

et al. 2004

Journal of Crystal Growth

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“…[74] Since a large number of short-lived radicals or highly reactive intermediates (the experimental data of which are temporarily unavailable) must be produced and may also play important roles in the equilibrium system, a theoretical study involving as many species as possible is desirable. As the main features of the co-deposition of the solid phases as a function of the experimental parameters of the process are already known, [11,[20][21][22][23][24][25][26][27][28][29]43,[57][58][59][60][61][62][63][64][65][66][67][68][69][70][71] an optimization and application of a new database is another main motivation for our work. For these reasons, we carried out thermodynamic data evaluations in the H 2 /MTS system [75][76][77][78][79][80][81] with accurate model chemistry methods.…”

Section: Full Papermentioning

confidence: 99%

Thermodynamics of the Production of Condensed Phases in the CVD of Methyltrichlorosilane Pyrolysis

Deng

Zeng

et al. 2009

Chemical Vapor Deposition

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Production conditions of the condensed phases (b-SiC, silicon, and graphite) in the CVD of methyltrichlorosilane (MTS) pyrolysis are investigated in detail with thermodynamic analyses based on a relatively complete and refined database. Production of the condensed phases is examined as a function of temperature, pressure, and the initial gas ratio of H 2 / MTS. The results show that the composition of the condensed phase is quite sensitive to both temperature and the molar ratio of H 2 /MTS, whereas it is less sensitive to pressure. The ideal conditions for the deposition of b-SiC are temperatures between 1300 and 1500 K, H 2 /MTS ratios between 10 and 10 5 , and with pressures as low as convenient. The co-deposition of C or Si with b-SiC is mainly controlled by the ratio of H 2 /MTS. The co-deposition of C with b-SiC should be in low H 2 /MTS ratios (<10) and the codeposition of Si with b-SiC needs high H 2 /MTS ratios (>10 4 ). The results are in very good agreement with experimental findings and previous theoretical investigations. The present work is also instructive as to the experimental conditions relating to continuous regions of temperatures, pressures, and the H 2 /MTS ratios.

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“…The reaction kinetics and mechanisms of this reaction have been thoroughly reported in the literature through chemical vapour deposition [21][22][23][24], chemical vapour infiltration [25], radio frequency induction plasma [26] and pyrolysis [27] investigations. In this article the synthesis of SiC nanoparticles from MTS is reported using a microwave-induced plasma, operating at atmospheric pressure in an argon/hydrogen environment.…”

Section: Introductionmentioning

confidence: 99%

Microwave-plasma synthesis of nano-sized silicon carbide at atmospheric pressure

Laar

Slabber

Meyer

et al. 2015

Ceramics International

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A microwave plasma process operating at atmospheric pressure was developed for the synthesis of SiC nanoparticles. The process utilizes methyltrichlorosilane (MTS) as precursor, acting as both carbon and silicon source, along with an additional hydrogen feed to ensure a fully reducing reaction environment. In addition, argon served as carrier gas. The parameters studied were the H 2 :MTS molar ratio and the total enthalpy, in the range 0-10 and 70-220 MJ/kg respectively. The particles size distribution ranged from 15 to 140 nm as determined by SEM and TEM micrographs. It was found that an increase in enthalpy and a higher H 2 :MTS ratio resulted in smaller SiC particle sizes. The adhesion of particles was a common occurrence during the process, resulting in larger agglomerate sizes.

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In situ measurements and growth kinetics of silicon carbide chemical vapor deposition from methyltrichlorosilane

Cited by 54 publications

References 18 publications

Growth and modulation of silicon carbide nanowires

Growth and modulation of silicon carbide nanowires

Thermodynamics of the Production of Condensed Phases in the CVD of Methyltrichlorosilane Pyrolysis

Microwave-plasma synthesis of nano-sized silicon carbide at atmospheric pressure

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