In-situ light scattering studies of substrate cleaning and layer nucleation in silicon MBE

Robbins, David J.; Pidduck, A. J.; Cullis, A. G.; Chew, N. G.; Hardeman, R. W.; Gasson, D. B.; Pickering, C.; Daw, A.C.; Johnson, Matthew D.; Jones, R.

doi:10.1016/0022-0248(87)90427-1

Cited by 33 publications

(10 citation statements)

References 6 publications

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“…A variety of in-situ optical probes have been discussed in the literature, including reflectance [4-61, ellipsometry [7,13], reflectance difference spectroscopy [8], diffuse scattering [9,14], and surface photoabsorption [10,15]. Reflectance is an attractive technique for monitoring oxide desorption because it is relatively easy and inexpensive to implement, and it is sensitive to the presence of a few monolayers of oxide.…”

Section: Introductionmentioning

confidence: 99%

In-situ Reflectance Monitoring of GaSb Substrate Oxide Desorption

Vineis¹,

Wang²,

Jensen³

2000

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The use of specular reflectance to monitor GaSb substrate oxide desorption in-situ is reported. Substrates were loaded into the organometallic vapor phase epitaxy reactor either as-received (epi-ready) or after receiving a solvent degrease, acid etch and rinse. A variety of surface preparations and anneal conditions were investigated. HC1 was used as the etchant, and in certain cases was followed by an additional etch in Br2-HCl-HN0,-CH3COOH for comparison. Rinse comparisons included 2-propanol, methanol, and deionized water. Substrates were heated to either 525, 550, or 575 "C. Features observed in the in-situ reflectance associated with the oxide desorption process were interpreted based on the starting oxide chemistry and thickness. Based on in-situ reflectance and exsitu atomic force microscopy data, a recommendation on a reproducible GaSb substrate preparation technique suitable for high-quality epitaxial growth is suggested.

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Section: Introductionmentioning

confidence: 99%

In-situ Reflectance Monitoring of GaSb Substrate Oxide Desorption

Vineis¹,

Wang²,

Jensen³

2000

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“…Figure 1 shows a schematic diagram of the LLS apparatus as used in conjunction with either MBE or CVD ultrahigh vacuum (UHV) reactors (2,3). Using a 15 mW Ar' laser (;~ = 488 nm), the scattered intensity in a fixed geometry (determined by the availability of viewports with lineof-sight of the substrate) is measured by a photon counting photomultiplier focused on the incident laser spot using a telephoto lens.…”

Section: Methodsmentioning

confidence: 99%

“…In situ laser light scattering (LLS) has recently been applied to low temperature epitaxy by both molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) (1)(2)(3). The present paper (Part I) studies its role as an in situ monitor of layer quality during silicon MBE; the results have been reported previously in preliminary form (4).…”

mentioning

confidence: 99%

In Situ Laser Light Scattering: I . Detection of Defects Formed during Silicon Molecular Beam Epitaxy

Pidduck¹,

Robbins²,

Cullis³

et al. 1989

J. Electrochem. Soc.

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“…10 (c)), leaving a pronounced conical depression there. A number of studies (Cullis and Booker 1971, Henderson, Marcus and Polito, 1971, Robbins et al 1987, Pidduck et al 1989) have shown that Sic particles can impede the flow of steps both during growth and dissolution of (loo} or (1 11) Si in vapour transport processes. At high growth temperatures (e.g.…”

Section: The Origin Of the Pagoda Defectmentioning

confidence: 98%