In situ interference measurements of glass substrate temperature

Real-time Optical Thickness Monitor for thin film growth

“…Of note , this same interference pattern can also be used to measure the temperature of a substrate. [1] I I I I I I I I , , ,…”

“…The transmitted angle , 8\, is determined with Snell's Law: (1) (2) where )..0 is the laser's wavelength in vacuum . Note the existence of a rr phase change of the wave when reflected from a medium with n, > ni.…”

Preparation and characterization of monolithic HgCdTe/CdTe tandem cells

“…The target was a cold-pressed mixture of high purity HgTe (5N) and CdTe (5N) with the CdTe content of either 70% or 85%. The growth temperature was monitored by an optical interference technique through the glass substrate [8]. Pure argon gas flowed through the chamber during the deposition, the deposition pressure was controlled in the range of 5 to 30 millitorr and the RF power was from 20 to 40 W. A one inch diameter quartz tube was used to carry out the vapor CdCl 2 treatment on Hg 1-x Cd x Te films, dry air was induced during heating and temperature was controlled in the range of 360 o C to 400 o C. The films were analyzed by infrared (IR) transmission, energy dispersive x-ray spectroscopy (EDS) and x-ray diffraction (XRD).…”

RF sputtered HgCdTe films for tandem cell applications

“…The HgCdTe target is a cold-pressed mixture of HgTe (5N) and CdTe (5N), and films were deposited on well cleaned soda lime glass. The substrate temperature was calibrated by an optical interference technique [6]. Pure argon or 5% nitrogen in argon gas was induced into the chamber during the deposition, the deposition pressure was controlled in the range of 5×10 -3 to 3×10 -2 Torr and the RF power was from 20 to 40 W. The substrate was not heated, and temperature was approximately 50 °C due to radiation energy from the sputtering.…”