In Situ Generating YVO₄:Eu³⁺,Bi³⁺ Downshifting Phosphors in SiO₂ Antireflection Coating for Efficiency Enhancement and Ultraviolet Stability of Silicon Solar Cells

Abstract

Solar photovoltaic (PV) technology is an important way to solve global energy shortages and climate deterioration. [1][2][3][4] Crystalline silicon (c-Si) solar cells dominate the global solar PV market, occupying more than 95%, mainly owing to their superior photoelectric conversion efficiency (PCE), high stability, low cost, nontoxicity, and abundant materials. [5] A key goal of research and production of c-Si solar cells is to increase the PCE and reduce the manufacturing cost, thus reducing the levelized cost of electricity (LCOE). [6] In recent years, the PCE of c-Si solar cells has made tremendous progress due to the rapid development of passivating contact technology, [7][8][9] which is a typical technique for improving the electrical properties of c-Si solar cells. [10,11] However, further improvement of the PCE of c-Si solar cells depends on the cooperative improvement of the optical and electrical properties.Broadening the spectral response is one of the important ways to improve the optical properties of solar cells. To broaden the spectral response of c-Si solar cells, spectral conversion has been widely studied and developed as a promising technology. [12] Luminescence downconversion (including downshifting and quantum cutting) materials, which can absorb high-energy ultraviolet (UV) photons and emit low-energy photons at long wavelengths, can simultaneously improve the conversion efficiency of solar cells or modules [13,14] and enhance their UV stability, [15,16] thus attracting more attention. In addition to causing the aging of module packaging materials, [17] UV irradiation can degrade the electrical performance of solar cells. [18] Recently, Sinha et al. reported that more efficient n-type silicon-based solar cells, especially silicon heterojunction (SHJ) solar cells, are more vulnerable to UV