In-situ FTIR emission spectroscopy in a technological environment: chemical vapour infiltration (CVI) of SiC composites

Hopfe, V.; Mosebach, H.; Erhard, Markus; Meyer, M.

doi:10.1016/0022-2860(95)08555-a

Cited by 30 publications

(34 citation statements)

References 19 publications

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“…[14,15] A first indication of the formation of larger species in the gas phase, observed by in situ Fourier transform infrared (FTIR) spectrometry, has recently been reported. [16] According to comprehensive fundamental studies on the gasphase pyrolysis of methyl-and methylchlorosilanes formation of such larger species in complex synthesis reactions in the gas phase should be a reality. [17] Another impressive example has recently been published; it is concerned with chemical vapor deposition of silicon dioxide from silicon tetrachloride and oxygen.…”

Section: Resultsmentioning

confidence: 99%

CVD in Hot Wall Reactors—The Interaction Between Homogeneous Gas-Phase and Heterogeneous Surface Reactions

Hüttinger¹

1998

Chem. Vap. Deposition

127

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The paper is concerned with chemical vapor deposition in hot wall reactors and in particular with the interaction of homogeneous gas-phase and heterogeneous surface reactions. Based on model considerations it is shown that this interaction has a tremendous influence on the deposition chemistry and kinetics in all cases in which the precursor gas undergoes complex gasphase reactions. The decisive parameter determining the interaction is given by the ratio of free volume of the deposition space and size of the surface area of the substrate; it is termed the "third parameter" of chemical vapor deposition. Predictions from the model are experimentally confirmed using results on chemical vapor deposition of pyrolytic carbon from methane. The importance of this "third parameter" of chemical vapor deposition in investigations of kinetics and for technical processes of chemical vapor deposition and infiltration is discussed in the conclusion.

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Section: Resultsmentioning

confidence: 99%

CVD in Hot Wall Reactors—The Interaction Between Homogeneous Gas-Phase and Heterogeneous Surface Reactions

Hüttinger¹

1998

Chem. Vap. Deposition

127

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“…Experimental studies have not yet, however, examined the full range of deposition conditions, due to the time and expense of more extensive studies. Additionally, attempts [11,30,[32][33][34]39] to understand the deposition process have encountered great difficulties in identifying, in-situ, the intermediate species in the system of the complicated gasphase mixture. Investigations based on thermodynamic analyses thus become important.…”

Section: Introductionmentioning

confidence: 99%

Thermodynamics of the Production of Condensed Phases in the CVD of Methyltrichlorosilane Pyrolysis

Deng

Zeng

et al. 2009

Chemical Vapor Deposition

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Production conditions of the condensed phases (b-SiC, silicon, and graphite) in the CVD of methyltrichlorosilane (MTS) pyrolysis are investigated in detail with thermodynamic analyses based on a relatively complete and refined database. Production of the condensed phases is examined as a function of temperature, pressure, and the initial gas ratio of H 2 / MTS. The results show that the composition of the condensed phase is quite sensitive to both temperature and the molar ratio of H 2 /MTS, whereas it is less sensitive to pressure. The ideal conditions for the deposition of b-SiC are temperatures between 1300 and 1500 K, H 2 /MTS ratios between 10 and 10 5 , and with pressures as low as convenient. The co-deposition of C or Si with b-SiC is mainly controlled by the ratio of H 2 /MTS. The co-deposition of C with b-SiC should be in low H 2 /MTS ratios (<10) and the codeposition of Si with b-SiC needs high H 2 /MTS ratios (>10 4 ). The results are in very good agreement with experimental findings and previous theoretical investigations. The present work is also instructive as to the experimental conditions relating to continuous regions of temperatures, pressures, and the H 2 /MTS ratios.

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“…The measurements can be done in absorption [19±21] or emission. [22,23] In the present study, the composition of the gas phase during propane decomposition in a CVD reactor was analyzed by several means. Infrared absorption spectroscopy is a powerful non-intrusive technique.…”

Section: Introductionmentioning

confidence: 99%

Analysis of the Gas Phase by In Situ FTIR Spectrometry and Mass Spectrometry During the CVD of Pyrocarbon from Propane

Féron

Langlais

Naslain

1999

Chem. Vap. Deposition

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A Fourier transform IR spectrometer and a mass spectrometer have been coupled to a pyrocarbon low pressure CVD reactor in order to investigate the gas phase during pyrolysis of propane in the range 600±1060 C. The variations of the amounts of intermediate species such as ethylene, acetylene, and benzene are followed by infrared absorption measurements as a function of temperature and residence time. Mass spectrometry allows additional minor species to be identified. The overall study permits a reaction pathway from propane to diacetylene, benzene, and heavier species to be proposed.

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In-situ FTIR emission spectroscopy in a technological environment: chemical vapour infiltration (CVI) of SiC composites

Cited by 30 publications

References 19 publications

CVD in Hot Wall Reactors—The Interaction Between Homogeneous Gas-Phase and Heterogeneous Surface Reactions

CVD in Hot Wall Reactors—The Interaction Between Homogeneous Gas-Phase and Heterogeneous Surface Reactions

Thermodynamics of the Production of Condensed Phases in the CVD of Methyltrichlorosilane Pyrolysis

Analysis of the Gas Phase by In Situ FTIR Spectrometry and Mass Spectrometry During the CVD of Pyrocarbon from Propane

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