“…[47][48][49][50][51][52][53] The unique layered structure of MoS 2 is very beneficial for ion insertion/de-insertion. 54,55 More importantly, due to weak electrostatic interactions, Mg 2+ can be effectively inserted around the S 2− anion and prevent it from undergoing undesirable phase transitions, displaying high promise for Mg 2+ storage. 56 Despite the above merits, the application of MoS 2 as the electrode material in MISs is limited due to the fact that the small layer spacing of MoS 2 is not conducive to the reversible intercalation of Mg 2+ , which increases ion diffusion resistance, resulting in a low utilization rate of electrode materials, poor cycling stability and serious capacity attenuation.…”