2004
DOI: 10.1109/tsm.2004.831536
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In Situ Fault Detection of Wafer Warpage in Microlithography

Abstract: Wafer warpage is common in microelectronics processing. Warped wafers can affect device performance, reliability and linewidth control in various processing steps. We proposed in this paper an in situ fault detection technique for wafer warpage in microlithography. Early detection will minimize cost and processing time. Based on first principle thermal modeling, we are able to detect warpage fault from available temperature measurements. Experimental results demonstrate the feasibility and repeatability of the… Show more

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Cited by 14 publications
(20 citation statements)
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“…The temperature drop is about 0.1 C. Notice a ten times reduction in the magnitude of the temperature disturbance when feedforward control was used. In contrast the temperature disturbance in [4] like Experiment (a) was larger than 1 C because feedforward control was not implemented making it less suitable for industrial implementation. Wafers Table I.…”
Section: Introductionmentioning
confidence: 97%
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“…The temperature drop is about 0.1 C. Notice a ten times reduction in the magnitude of the temperature disturbance when feedforward control was used. In contrast the temperature disturbance in [4] like Experiment (a) was larger than 1 C because feedforward control was not implemented making it less suitable for industrial implementation. Wafers Table I.…”
Section: Introductionmentioning
confidence: 97%
“…Hence, warpage can be detected from the temperature disturbances. Using temperature to detect warpage is also given in [4]. However, in [4], the temperature disturbance used as the signal for warpage computation had magnitude of more than a degree Celcius.…”
Section: Introductionmentioning
confidence: 99%
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