2020
DOI: 10.1016/s1872-2067(19)63498-4
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In-situ fabrication SnO2/SnS2 heterostructure for boosting the photocatalytic degradation of pollutants

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Cited by 32 publications
(9 citation statements)
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“…The capacitance formed at the interface of ETL and the electrolyte can be calculated by eq : in which N D , e , ε 0 , ε r , V fb , V , k , and T are the carrier concentration, electron charge, vacuum permittivity, a dielectric constant of semiconductor, flat band potential, applied potential, Boltzmann constant, and absolute temperature, respectively . The flat-band potential ( V fb ) is calculated by the intercept of the fitted linear region on the potential axis and donor density, N D , determined using the equation N D = 1/(ε o ε r e )­( d (1/ C 2 )/ dV ) −1 , from the linear slope in Mott–Schottky plot. Combined with the band gap values in DTS analysis, the energy level structures can be calculated for all films (Table S3). The corresponding energy level structure was inserted in Figure .…”
Section: Resultsmentioning
confidence: 99%
“…The capacitance formed at the interface of ETL and the electrolyte can be calculated by eq : in which N D , e , ε 0 , ε r , V fb , V , k , and T are the carrier concentration, electron charge, vacuum permittivity, a dielectric constant of semiconductor, flat band potential, applied potential, Boltzmann constant, and absolute temperature, respectively . The flat-band potential ( V fb ) is calculated by the intercept of the fitted linear region on the potential axis and donor density, N D , determined using the equation N D = 1/(ε o ε r e )­( d (1/ C 2 )/ dV ) −1 , from the linear slope in Mott–Schottky plot. Combined with the band gap values in DTS analysis, the energy level structures can be calculated for all films (Table S3). The corresponding energy level structure was inserted in Figure .…”
Section: Resultsmentioning
confidence: 99%
“…The carrier lifetime (τe) of samples are based on the EIS Bode plots (Fig. S4(ab)), proving the carrier transfer process, according to the equation [30] :…”
Section: Catalyst Mechanism Analysismentioning
confidence: 90%
“…SnS 2 has been proved to be a promising photocatalyst under visible light and short-wavelength near-infrared irradiation due to its narrow band gap [50][51][52]. However, being prone to photocorrosion, sluggish photoinduced electrons and holes separation and valence band endowing holes with low oxidation ability restrict its photocatalytic efficiency [50,[52][53][54]. On the other hand, SnO 2 as an n-type semiconductor has a direct wide band gap from 3.2 to 3.72 eV [47,48,54,55].…”
Section: Ni-doped Sns 2 Partial Oxidation In Airmentioning
confidence: 99%
“…However, being prone to photocorrosion, sluggish photoinduced electrons and holes separation and valence band endowing holes with low oxidation ability restrict its photocatalytic efficiency [50,[52][53][54]. On the other hand, SnO 2 as an n-type semiconductor has a direct wide band gap from 3.2 to 3.72 eV [47,48,54,55]. The light-harvesting ability of SnO 2 is limited to the UV region of solar light [48,56].…”
Section: Ni-doped Sns 2 Partial Oxidation In Airmentioning
confidence: 99%