“…The capacitance formed at the interface of ETL and the electrolyte can be calculated by eq : in which N D , e , ε 0 , ε r , V fb , V , k , and T are the carrier concentration, electron charge, vacuum permittivity, a dielectric constant of semiconductor, flat band potential, applied potential, Boltzmann constant, and absolute temperature, respectively . The flat-band potential ( V fb ) is calculated by the intercept of the fitted linear region on the potential axis and donor density, N D , determined using the equation N D = 1/(ε o ε r e )( d (1/ C 2 )/ dV ) −1 , from the linear slope in Mott–Schottky plot. − Combined with the band gap values in DTS analysis, the energy level structures can be calculated for all films (Table S3). The corresponding energy level structure was inserted in Figure .…”