“…Hirsch et al, 52 Altman et al, 53 and Jentschke et al 54 have monitored Si atom densities in front of C/C-SiC composites exposed to nitrogen-oxygen plasma flows, using high-resolution spectroscopy of Si I multiplet emissions in the 250-253-nm range. Herdrich et al 55 observed Si emission near 252 nm and 288 nm while testing SiC specimens in oxygen-nitrogen plasmas, and also captured emission from SiO 2 molecules near 423 nm.…”