In Situ Diagnosis for IGBT Chip Failure in Multichip IGBT Modules Based on a Newly Defined Characteristic Parameter Low-Sensitive to Operation Conditions

Wang, Jianpeng; Yang, Xu; Wu, Yuwei; Liu, Yi; Wang, Tianjian; Wang, Laili; Jin, Zhang; Liu, Jinjun; Gan, Yongmei

doi:10.1109/tpel.2023.3253164

Cited by 4 publications

(2 citation statements)

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“…As the gate input capacitance of high-power multi-chip module chip branch defects, it affects the circuit response o the influence of the power measurement voltage and curren ule on the turn-on process, ref. [67] proposes the use of the g has not reached the threshold voltage, that is, the pre-thresh th), to characterize the state of the multi-chip IGBT module o caused by the failure of the bonding line, and obtain the stat th) by delayed sampling. Chip branch defects were simulate However, VGE(pre-th) is the switching transient quantity o only has high requirements for signal acquisition but also possible noise problem in the switching [68].…”

Section: Gate Voltagementioning

confidence: 99%

“…To avoid the influence of the power measurement voltage and current of the multi-chip IGBT module on the turn-on process, ref. [67] proposes the use of the gate voltage of the module that has not reached the threshold voltage, that is, the pre-threshold voltage gate signal V GE(pre-th) , to characterize the state of the multi-chip IGBT module owing to the chip branch defect caused by the failure of the bonding line, and obtain the state characteristic quantity V GE(pre-th) by delayed sampling. Chip branch defects were simulated by cutting the bonding line.…”

Section: Gate Voltagementioning

confidence: 99%

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Research Progress in Failure Mechanism and Health State Evaluation Index System of Welded IGBT Power Modules

et al. 2023

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As the performance requirements of insulated gate bipolar transistors (IGBTs) in various fields of power electronic systems are increasing, the IGBT power module package structure, aging mechanism analysis, and selection of health state characteristic parameters are of great significance to ensure the normal operation of power systems. At present, research on the aging failure of welded IGBT modules is relatively comprehensive and can be divided into chip aging failure and package aging failure according to their failure parts. However, there is some research on the relationship between aging failure and the characteristic quantity of power modules, but no definite system has been formed. Therefore, in this paper, the packaging structure of the solder-type IGBT modules and the aging mechanism caused by different aging reasons were summarized. Moreover, the health status monitoring of solder-type IGBT modules from the junction temperature, bonding line, solder layer, and package insulation aging health status monitoring and its quantitative assessment research progress was analyzed in detail. Also, the health state evaluation index system of the solder-type IGBT modules was completed on the basis of voltage, current, thermal, insulation parameters, and other characteristic quantities. Finally, based on the analysis of domestic and international research problems, the development trend and direction of the condition monitoring technology of solder-type IGBT modules is foreseen. The research on condition monitoring for welded IGBT module technology has a certain significance.

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Section: Gate Voltagementioning

confidence: 99%

Section: Gate Voltagementioning

confidence: 99%