In situ detection of rearrangement processes during electron beam annealing of ion implanted InP

Maurer, Christian; Kallweit, R.; Baumann, H.; Bethge, Κ.; Krimmel, Eberhard F.

doi:10.1016/0168-583x(93)96182-c

Cited by 30 publications

(7 citation statements)

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“…The implantations were performed at the 60 kV implanter of the Institut fü r Kernphysik. Subsequently, the samples were thermally treated in a 20 kV electron beam annealing equipment under high vacuum conditions (residual gas pressure 2 Â 10 --6 mbar) [21]. Since the emission coefficient of the implanted surface region is not known and additionally changes during the annealing process, the surface temperature of the sample was measured with a two colour pyrometer (type ISQ 10 LO, Impac, Germany).…”

Section: Methodsmentioning

confidence: 99%

Ion Beam Synthesis and Characterization of Crystalline Si3N4 Surface Layers

Theodossiu

Baumann

Matz

et al. 2002

phys. stat. sol. (a)

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A thin Si3N4 surface layer is formed by implantation of 60 keV 15N nitrogen ions into single‐crystalline silicon 〈100〉 with a fluence of 5.6 × 1017 ions/cm2 and subsequent annealing (1295 °C, 15 min) under high vacuum conditions. The 15N depth distribution is measured with the resonant nuclear reaction 15N(p, αγ)12C. The formation of Si‐N bonds is proven by Fourier transform infrared spectroscopy using samples implanted with 14N ions and 15N ions, respectively. The crystallinity of the Si3N4 surface layer is studied by X‐ray diffraction and transmission electron microscopy. The annealing process leads to the formation of a polycrystalline α‐Si3N4 surface layer with a thickness of 90 nm. The analysis of high resolution TEM micrographs shows that the layer is split into two sublayers both consisting of single α‐Si3N4 crystals with lateral extension up to 500 nm.

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Section: Methodsmentioning

confidence: 99%

Ion Beam Synthesis and Characterization of Crystalline Si3N4 Surface Layers

Theodossiu

Baumann

Matz

et al. 2002

phys. stat. sol. (a)

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“…The sample temperature was held near room temperature (RT) during the implantation. The implanted samples were thermally treated in a 20 keV electron beam annealing equipment [11] under high vacuum conditions. The total pressure of the residual gas was 2 Â 10 -6 mbar and the partial pressure of its O 2 component was 3 Â 10 -7 mbar measured with a residual gas analyzer (Quadrex 200, Leybold Inficon).…”

Section: Methodsmentioning

confidence: 99%

Characterization of Crystallinity of SiC Surface Layers Produced by Ion Implantation

Theodossiu

Baumann

Klimenkov

et al. 2000

phys. stat. sol. (a)

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Carbon implantations into silicon were carried out in order to form thin surface layers of SiC. Single crystalline h100i silicon samples were implanted with 40 keV 13 C ions with a fluence of 3.8 Â 10 17 ions/cm 2 and subsequently thermally treated under high vacuum conditions at different temperatures using a 20 keV electron beam. The isotope 13 C offers the advantage to measure the carbon redistribution caused by the thermal treatment process with the nuclear resonance reaction analysis. The crystallinity of SiC surface layers is studied by X-ray diffraction and transmission electron microscopy measurements. A polycrystalline 3C-SiC surface layer with a low content of 6H-SiC grains is formed with a thickness of about 70 nm. The analysis of high resolution TEM micrographs from the interface region obviously shows that the 6H-SiC phase coexists with the 3C-SiC modification in the SiC layer.

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“…10 This electron beam rapid thermal annealing process (EBA) offers the opportunity to examine the effect of annealing under high vacuum conditions ͑Ͻ1 ϫ 10 −6 mbar͒. Under such conditions of low oxygen partial pressure, and at typical annealing temperatures, reactions between silicon and oxygen form volatile SiO, in preference to SiO 2 growth, and thus the growth of a surface oxide layer is suppressed.…”

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Formation of SiC-surface nanocrystals by ion implantation and electron beam rapid thermal annealing

Markwitz

Johnson

Rudolphi

et al. 2004

Applied Physics Letters

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SiC-surface nanostructures on silicon were produced by 10keV carbon ion implantation into silicon followed by annealing to 1000°C for 15s under high-vacuum conditions using a raster-scanned electron beam. Following implantation, an amorphous layer is produced which starts at the surface and extends 65nm into the substrate. Following annealing, the implanted surface layer remains amorphous but becomes covered with semi-spherical crystalline features up to 300nm in diameter. The nanocrystals have been confirmed to be SiC which, following nucleation, grow as a result of C and Si diffusion across the oxide free substrate surface during annealing.

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In situ detection of rearrangement processes during electron beam annealing of ion implanted InP

Cited by 30 publications

References 1 publication

Ion Beam Synthesis and Characterization of Crystalline Si3N4 Surface Layers

Ion Beam Synthesis and Characterization of Crystalline Si3N4 Surface Layers

Characterization of Crystallinity of SiC Surface Layers Produced by Ion Implantation

Formation of SiC-surface nanocrystals by ion implantation and electron beam rapid thermal annealing

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