In Situ Decoration of ZnSnO3 Nanosheets on the Surface of Hollow Zn2SnO4 Octahedrons for Enhanced Solar Energy Application

Abstract

Hierarchical ZnSnO3/Zn2SnO4 porous hollow octahedrons were constructed using the method of combining the acid etching process with the in situ decoration technique for photovoltaic and photocatalytic applications. The composite was used as photoanode of the dye-sensitized solar cells (DSSCs), an overall 4.31% photovoltaic conversion efficiency was obtained, nearly a 73.1% improvement over the DSSCs that used Zn2SnO4 solid octahedrons. The composite was also determined to be a high-performance photocatalyst for the removal of heavy metal ion Cr (VI) and antibiotic ciprofloxacin (CIP) in single and co-existing systems under simulated sunlight irradiation. It was remarkable that the composite displayed good reusability and stability in a co-existing system, and the simultaneous removal performance could be restored by a simple acid treatment. These improvements of solar energy utilization were ascribed to the synergetic effect of the hierarchical porous hollow morphology, the introduction of ZnSnO3 nanosheets, and the heterojunction formed between ZnSnO3 and Zn2SnO4, which could improve light harvesting capacity, expedite electron transport and charge-separation efficiencies.

CuI/BaSnO3 Quantum Dot/ZnSnO3 Perovskite-based Transparent p–n Junction for Photovoltaic Enhancement

“…CuI/ZSO-BSO-2 exhibited a photovoltaic enhancement of ∼2.6 × 10 3 folds, with a slight decrease in transparency of ∼5–7%. This indicates that the regulation of carrier behavior by the homologous perovskite BaSnO 3 QD’s transition layer is more important than simple absorption. − The homologous perovskite BaSnO 3 QD at the interface of CuI/ZnSnO 3 act as a ladder to promote the transfer of photo-generated carriers while maintaining decent transparency and increasing carrier injection through their high QY. , Additionally, Cu vacancies induce hole-related carriers, optimizing the intrinsic defects. − The synergistic effects of appropriate Fermi level, high QY of homologous perovskite BaSnO 3 QD, and p-type carrier induced by Cu vacancies enable the achievement of a favorable kinetic equilibrium for high PCE. ,− , Therefore, by modifying with the dual-functional homologous perovskite BaSnO 3 QD, the CuI/BaSnO 3 QD/ZnSnO 3 obtains a decent balance between PCE and transparency. − , Additionally, the excellent physical–chemical stability of inorganic perovskite BaSnO 3 QD and ZnSnO 3 contributes to the overall stability. − ,− …”

“…22,23 However, current ZnSnO 3 -based devices can barely meet the demands of practical applications, necessitating a substantial improvement in photovoltaic conversion. 24,25 Notably, the selection of suitable p-type semiconductors is crucial for transparent photovoltaic devices. 26,27 In addition to the proper bandgap and stability required for the matched potential structure of p−n junctions and carrier transition, appropriate p-type semiconductors are of utmost importance.…”

“…Ma et al used a MoS 2 /ZnSnO 3 nanophotoanode to achieve excellent photoelectric response by reducing carrier recombination . Additionally, the high intrinsic carrier mobility and chemical valence state of ZnSnO 3 contributes to improved PCE and decent inoxidizability for long-term actual applications. , However, current ZnSnO 3 -based devices can barely meet the demands of practical applications, necessitating a substantial improvement in photovoltaic conversion. , …”