Using direct current-magnetron sputtering, Helium-trapped Ti films with a He/Ar mixture was studied. The relative helium content, helium depth profiles for the Ti films and crystallization capacity were analyzed by Enhanced Proton Backscattering Spectrometry (EPBS) and X-ray diffraction (XRD). It was found that helium diffusion enhanced as more helium trapping into Ti films, and the He holding ratios were 95.9%, 94.9%, 93.9%, 82.8% when the Ti films with the He/Ti of concentrations of 9.7 at.%, 19.5 at.%, 19.7 at.%, 48.3 at.% were measured again 4 months later, respectively. The diffraction peaks became weak and wider, the peak of (002) plane was shifted to smaller diffraction angles and the relevant interplanar spacing d (hkl) increased gradually as more helium trapping into Ti films. The main peak was made trending to the (101) plane by both higher deposition temperature and more helium trapping. magnetron sputtering, relative helium content, titanium filmThe study of "Helium Problems" in metals is referred to in many realms of nuclear energy technology [1][2][3][4][5] . It is very important to the research of the characteristics of keeping tritium materials for using nuclear energy peaceably and militarily. The pure metal of titanium is considered as the best material of keeping tritium, which is used as tritium target usually. 3 He produced from tritium disintegration is migratory in metals and has a strong tendency to get together at room temperature. Metal atoms are piled out of the original places and helium bubbles come into being when helium atoms get together to a critical range [6][7][8][9] . The helium bubbles grow up gradually and become dense with the increasing of 3 He atoms in metals. The large number of helium bubbles in metal will debase the capability of the material. This is the first problem to produce helium within these materials expediently and speedily. In order to study helium diffusion, a large number of helium is uniformly introduced into metals with no displacement damage by direct current (DC)-magnetron sputtering (there is low energy helium implantation in the technics).Helium charging in the Ti films was usually deposited starting at room temperature (not being heated up) or keeping at high constant temperature in previous literatures. No reports have been found that the deposition is completed by combining the two steps. We now conduct these experiments because it is advantageous to the study of helium diffusion and the best helium-charged capability of Ti films at high temperature (the relative helium content of which deposited just at high constant temperature is very rare but quite common at room temperature [10,11] ).A Ti disk (99.99% in purity, 65 mm in diameter and 7 mm in thickness) was used as the target. The distance between the target and the substrate (Mo, φ18×1 mm) was adjusted to 55 mm. All the substrates were fastened on a holder which could be heated by a resistive heater, and a −60 V bias was applied to the holder. The sub-