In-situ Creep Testing Capability Development for Advanced Test Reactor

Kim, B. G.; Rempe, J. L.; Knudson, D. L.; Condie, K. G.; Sencer, Bulent H.

doi:10.2172/989906

Cited by 6 publications

(3 citation statements)

References 47 publications

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“…Progressively, the pellet-cladding gap closes under the combined effect of the cladding creep and the pellet swelling induced by fission product accumulation. While the gap closes, the cladding, initially loaded in compression, progressively gets in contact with the pellets and becomes loaded in tension [4]. The tensile stress increases slowly up to about 20 to 30 MPa, which corresponds to an equilibrium value, according to the cladding creep rate and the pellet swelling rate.…”

Section: Introductionmentioning

confidence: 99%

Study of Thermal Creep of Coated Cladding Materials

Ševeček¹,

Shirvan²,

Ballinger³

2018

APP

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Coated cladding materials are considered as a near-term concept for so-called Accident Tolerant Fuel materials. Their behavior in accidental conditions is mainly studied around the world, however, they need to survive in-reactor normal operation before reaching theoretical accidental conditions. An out-of-pile experiment was designed to study accelerated inward thermal creep and outward displacement of a cladding that occurs after pellet-cladding interaction. Four different materials deposited by the cold-spray technique were studied as well as the reference uncoated one. The results confirm theoretical prediction that due to a mismatch between the fundamental physical properties of each layer, high stresses will build up and the plastic strains expected will lead to coating cracking.

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Section: Introductionmentioning

confidence: 99%

Study of Thermal Creep of Coated Cladding Materials

Ševeček¹,

Shirvan²,

Ballinger³

2018

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“…As discussed in [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] have deployed creep test rigs to detect the growth of tensile and creep specimens using a bellows to apply a variable load to a specimen and LVDTs to detect the growth of the specimen. In table 1, we compare aspects of these various creep test setups.…”

Section: Introductionmentioning

confidence: 99%

Linear variable differential transformer (LVDT)-based elongation measurements in Advanced Test Reactor high temperature irradiation testing

Knudson¹,

Rempe

2012

Meas. Sci. Technol.

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New materials are being considered for fuel, cladding and structures in next generation and existing nuclear reactors. These materials can undergo significant dimensional and physical changes during high temperature irradiations. Currently, such changes are determined by repeatedly irradiating a specimen for a specified period of time in the Advanced Test Reactor (ATR) and then removing it from the reactor for evaluation. The labor and time to remove, examine and return irradiated samples for each measurement make this approach very expensive. In addition, such techniques provide limited data and may disturb the phenomena of interest. To resolve these issues, an instrumented creep testing capability is being developed for specimens irradiated under pressurized water reactor coolant conditions in the ATR at the Idaho National Laboratory (INL). This paper reports the status of INL efforts to develop this testing capability. In addition to providing an overview of in-pile creep test capabilities available at other test reactors, this paper focuses on efforts to design and evaluate a prototype test rig in an autoclave at

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“…LTPS-TFT backplanes are required for fabricating flat panel displays such as active-matrix liquid displays and active-matrix organic light-emitting displays (AMOLEDs). [1][2][3][4][5] LTPS-TFT backplanes are strongly preferred to amorphous silicon (a-Si)-TFT ones since several devices, AMOLEDs in particular, operate in a current-driven mode. 6,7 Methods used for forming LTPS include solid-phase crystallization (SPC), 8,9 metal-induced crystallization, 10 and excimer laser crystallization.…”

mentioning

confidence: 99%

Microsecond Crystallization of Amorphous Silicon Films on Glass Substrates by Joule Heating

Hong¹,

2016

ECS J. Solid State Sci. Technol.

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Joule-heating-induced crystallization (JIC) of amorphous silicon (a-Si) films was conducted by applying an electric pulse to a conductive layer located beneath or above the films. Crystallization occurs across the whole substrate surface within few tens of microseconds. The phase-transformation phenomena during the JIC process were detected electrically and optically by the in-situ measurements of input voltage/current and normal reflectance at wavelength of 532 nm. We devised a method for the crystallization of a-Si films while preventing arc generation; this method consisted of pre-patterning an a-Si active layer into islands and then depositing a gate oxide and gate electrode. Electric pulsing was then applied to the gate electrode formed using a Mo layer. JICprocessed poly-Si thin-film transistors were fabricated successfully, and the proposed method was found to be compatible with the standard processing of coplanar top-gate poly-Si TFTs. The p-channel JIC poly-Si TFT with W/L = 7 μm/7 μm exhibited a field effect mobility of 38.9 cm 2 /V-s, a threshold voltage of −2. Low-temperature polycrystalline silicon (LTPS) is a crucial active layer material for polycrystalline silicon thin-film transistors (poly-Si TFTs) on thermally susceptible glass substrates. LTPS-TFT backplanes are required for fabricating flat panel displays such as active-matrix liquid displays and active-matrix organic light-emitting displays (AMOLEDs).1-5 LTPS-TFT backplanes are strongly preferred to amorphous silicon (a-Si)-TFT ones since several devices, AMOLEDs in particular, operate in a current-driven mode.6,7 Methods used for forming LTPS include solid-phase crystallization (SPC), 8,9 metal-induced crystallization, 10 and excimer laser crystallization. 11Sameshima et al. were the first to report Joule heating crystallization carried out using Cr strips as heating sources in order to rapidly crystallize silicon films.12 They crystallized 50-nm-thick a-Si films via 200-nm-thick SiO 2 intermediate layers by applying an electric field to Cr strips with a power density of ∼10 5 W/cm 2 . Extending this concept further, we have developed a crystallization method for a-Si films called Joule-heating-induced crystallization (JIC). [13][14][15] In this method, an electric field is applied to a conductive layer above or beneath a-Si films to induce Joule heating that in turn leads to crystallization of the films. The film temperature in this method is more uniform than that achieved using other conventional heating methods since the Joule heat is generated uniformly throughout the conductive layer. The optimum processing windows for the JIC process strongly depend on the power density (W/cm 2 ) and pulsing time applied during the process. These process parameters determine the heating rate as well as the depth of thermal penetration from the Joule-heat source. During electrical pulsing the maximum temperature depends on power density and pulsing time. As the power density increases the heating rate increases. Thus in order to obtain a given crysta...

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In-situ Creep Testing Capability Development for Advanced Test Reactor

Cited by 6 publications

References 47 publications

Study of Thermal Creep of Coated Cladding Materials

Study of Thermal Creep of Coated Cladding Materials

Linear variable differential transformer (LVDT)-based elongation measurements in Advanced Test Reactor high temperature irradiation testing

Microsecond Crystallization of Amorphous Silicon Films on Glass Substrates by Joule Heating

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