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2019
DOI: 10.1016/j.seppur.2019.06.002
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In situ construction of semimetal Bi modified BiOI-Bi2O3 film with highly enhanced photoelectrocatalytic performance

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Cited by 41 publications
(4 citation statements)
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“…On the basic of various characterization and experimental results, a possible mechanism photodegrading CIP and LEV of 20% Bi-Bi 2 WO 6 /BiOI heterojunctions was proposed, as indicated in Figure 12. The Fermi level of Bi 0 (approximately -0.17 eV) is more negative than the CB independent of Bi 2 WO 6 and BiOI, so the photogenerated charge of Bi 0 can be easily transferred to BiOI or Bi 2 WO 6 [64]. According to literature reports, Bi 2 WO 6 is a typical n-type semiconductor, and BiOI is a typical p-type semiconductor, and the combination between n-type Bi 2 WO 6 and p-type BiOI will result in the formation of p-n heterojunc-tions [65].…”
Section: -mentioning
confidence: 99%
“…On the basic of various characterization and experimental results, a possible mechanism photodegrading CIP and LEV of 20% Bi-Bi 2 WO 6 /BiOI heterojunctions was proposed, as indicated in Figure 12. The Fermi level of Bi 0 (approximately -0.17 eV) is more negative than the CB independent of Bi 2 WO 6 and BiOI, so the photogenerated charge of Bi 0 can be easily transferred to BiOI or Bi 2 WO 6 [64]. According to literature reports, Bi 2 WO 6 is a typical n-type semiconductor, and BiOI is a typical p-type semiconductor, and the combination between n-type Bi 2 WO 6 and p-type BiOI will result in the formation of p-n heterojunc-tions [65].…”
Section: -mentioning
confidence: 99%
“…Q. Wang et al (2019) prepared a Bi-modified BiOI-Bi 2 O 3 heterojunction using an in situ reduction method applying UV light with BiOI-Bi 2 O 3 previously prepared by single immersion at room temperature method reported by Cong et al (2017) . Using high-resolution transmission electron microscopy (HRTEM), the morphology of the Bi/BiOI-Bi 2 O 3 film was investigated; results, showed that the Bi 0 (012) planes and BiOI (110) planes were predominant, where Bi 0 was in direct contact with BiOI.…”
Section: Biox-based Materialsmentioning
confidence: 99%
“…Unfortunately, the narrow band gap of BiOI and the fast recombination rate of photogenerated electron-hole carriers largely limit its practical application. 16 To address these questions, a series of strategies, such as heteroatom doping, 17 morphology control, 18 vacancy engineering, 18 surface functionalization, 19 and especially heterojunction construction, 20 for example, BiOI/CdS, 21 BiOI/ g-C 3 N 4 , 22 BiOI/Bi 2 O 3 , 23 BiOI/WO 3 , 24 BiOI/BiOX (X = Cl, Br) 25,26 have been developed to improve the catalytic performance of BiOI. However, most of these inorganic semiconductors lack porosity 27 and are coagulating rather than dispersing in wastewater, 28 which induce kinetic shielding and hampers the diffusion of molecular reactants and products.…”
Section: Introductionmentioning
confidence: 99%