2018
DOI: 10.1016/j.apcatb.2018.04.006
|View full text |Cite
|
Sign up to set email alerts
|

In situ constructing interfacial contact MoS2/ZnIn2S4 heterostructure for enhancing solar photocatalytic hydrogen evolution

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

4
71
0

Year Published

2019
2019
2022
2022

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 200 publications
(75 citation statements)
references
References 54 publications
4
71
0
Order By: Relevance
“…Recently, the two‐dimensional MoS 2 has attracted many interests in PHE to replace the expensive noble metals [14] . Moreover, many reports demonstrated that MoS 2 is an effective co‐catalyst to realize the enhanced PHE activity under visible light irradiation [15–17] . Various theoretical and experimental results proved that unsaturated S atoms located along the edges of the MoS 2 layers were catalytically active for PHE, while the S atoms on the basal plane exhibited no activity [18–20] .…”
Section: Introductionmentioning
confidence: 99%
“…Recently, the two‐dimensional MoS 2 has attracted many interests in PHE to replace the expensive noble metals [14] . Moreover, many reports demonstrated that MoS 2 is an effective co‐catalyst to realize the enhanced PHE activity under visible light irradiation [15–17] . Various theoretical and experimental results proved that unsaturated S atoms located along the edges of the MoS 2 layers were catalytically active for PHE, while the S atoms on the basal plane exhibited no activity [18–20] .…”
Section: Introductionmentioning
confidence: 99%
“…The CB of In 2 O 3 (~ − 0.6 eV versus SHE) being more negative than that of MoS 2 (~ − 0.5 eV versus SHE), there was a migration of photogenerated electrons from the CB of In 2 O 3 to that of MoS 2 following which there occurred interaction of these electrons with adsorbed O 2 species to form O 2 −· 46 , 47 . With a band gap of 1.91 eV, the VB of MoS 2 (~ + 1.39 eV versus SHE) would be placed higher than that of In 2 O 3 (∼ + 2.2 eV versus SHE) 52 , 53 . This would drive holes from the VB of In 2 O 3 to that of MoS 2 .…”
Section: Resultsmentioning
confidence: 99%
“…In view of the above factors, many researches have been carried out to try to solve the above shortcomings. Furthermore, the combination of ZnIn 2 S 4 with other semiconductors to improve the photocatalytic performance of ZnIn 2 S 4 has been verified [42][43][44][45][46][47][48][49].…”
Section: Introductionmentioning
confidence: 89%