In Situ Conductance of Fe/Si and Fe/Ge Multilayers

Chomiuk, P.; Błaszyk, M.; Luciński, T.; Wróblewski, M.; Susła, B.

doi:10.12693/aphyspola.113.657

Cited by 4 publications

(3 citation statements)

References 5 publications

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“…The in-situ conductance measurements were performed using a two-point method during deposition of the Fe/Si multilayers for Si thicknesses S = 1 3 and 2.5 nm, corresponding to the maximum, and the absence of the AF coupling, respectively [35]. Silver wires were used as electrodes, attached to the substrate using silver paste.…”

Section: The Properties Of Fe Sublayers -In-situ Conductance Measuremmentioning

confidence: 99%

Magnetic and electric properties of (Fe, Co)/(Si, Ge) multilayers

Luciński

Chomiuk

2011

Open Physics

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We review selected results concerning the interlayer exchange coupling in Fe/SixFe1−x , Fe/Ge and Co/Si layered structures. Among the ferromagnet/semiconductor systems, Fe/Si structures are the most popular owing to their strong antiferromagnetic interlayer coupling. We show that such interaction depends not only on semiconducting sublayer thickness, but also on deposition techniques and on the chemical composition of the sublayer as well. In similar heterostructures e.g. Fe/Ge, antiferromagnetic coupling was observed only in ion-beam deposited trilayers at low temperatures. In contrast, in Fe/Ge multilayers deposited by sputtering, no such coupling was found. However, when the Ge is partially substituted by Si, antiferromagnetic interlayer coupling appears. For Co/Si multilayers, we observed a very weak exchange coupling and its oscillatory behavior. The growth of Co on Si occurs in an island growth mode. The evolution of magnetic loop shapes can be successfully explained by the interplay between interlayer coupling and anisotropy terms.

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Section: The Properties Of Fe Sublayers -In-situ Conductance Measuremmentioning

confidence: 99%

Magnetic and electric properties of (Fe, Co)/(Si, Ge) multilayers

Luciński

Chomiuk

2011

Open Physics

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“…A lot of papers have been devoted to this system in order to clarify the origin of the interlayer interaction (see [1][2][3] and references therein). The AF interlayer coupling is affected by the interdiffusion of Fe and Si, leading to the formation of various Fe-Si mixtures.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, in order to observe both the intermixing process and growth of individual layers, in situ conductance measurements during the multilayer deposition were performed. In our previous paper [3] we reported conductance vs. deposition time dependences of Fe/Si and Fe/Ge Mls. A model describing the growth of the individual layers was proposed.…”

Section: Introductionmentioning

confidence: 99%

Interface Mixing in Fe/Si Multilayers Observed by the In Situ Conductance Measurements

et al. 2009

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In this contribution the in situ conductance vs. deposition time dependences of Fe/Si multilayers are analysed. The plot of resistance multiplied by the square of the thickness as a function of iron thickness shows that during the iron deposition initially amorphous-like Fe-Si mixture is formed, next the mixture crystallises, and finally bcc-Fe phase appears. The interface mixing is also manifested by the reduction of the total multilayer thickness measured by small angle X-ray diffraction.

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