Abstract:The gauge-links connecting the parton field operators in the hadronic matrix elements appearing in the transverse momentum dependent distribution functions give rise to T -odd effects. Due to the process-dependence of the gauge-links the T -odd distribution functions appear with different prefactors. A consequence is that in the description of single spin asymmetries the parton distribution and fragmentation functions are convoluted with gluonic pole cross sections rather than the basic partonic cross sections… Show more
“…Compared with our earlier work using a 40 nm thick Fe-SrF 2 (~ 37 vol% Fe) without the SrF 2 top layer [11], the current in this work is about one order smaller. This is thought to be due to the existence of the 1 nm thick SrF 2 top layer.…”
Section: Coulomb Staircase Of Fe-srf 2 Granular Filmcontrasting
confidence: 59%
“…With this in mind, combined TEM/STM experiments have been successfully performed to correlate the geometry and the electric properties of metallic nanowires [8][9][10] (TEM: transmission electron microscopy; even without the feedback control, the word STM is used in this report). A similar experiment was carried out on metal-insulator granular films composed of metallic nanoparticles dispersed in an insulator matrix, and a clear Coulomb blockade effect was confirmed at room temperature (RT) when the contact area was small [11].…”
Section: Introductionmentioning
confidence: 81%
“…The fundamental design is same as the designs of those developed for studies on metallic nanowires [10,12]. The holder is loaded with three mechanical micrometers for a coarse Au-tips movement (µm -mm) and a tube-type piezoactuator for a fine Au-tips movement (nm -µm) which is controlled by the piezo controller with the output voltage of ± 100 V. By using the stepping motor controller, a motor installed in this holder can be rotated, and one of the two Au-tips were selected for the experiment without breaking the vacuum [11]. The current between Au electrodes were measured by using the current-to-voltage converter and the STM measurement unit.…”
Conductance measurements of nanostructures with simultaneous transmission electron microscopy (TEM) were performed on thin insulating SrF 2 films (3 nm thick) and Fe-SrF 2 granular films (10 nm thick) deposited on tip-shaped Au electrodes. By using a movable counter electrode, nanoscale regions were selected for investigation. Systematic measurements taken during the deformation of the SrF 2 film by the counter electrode provided a tunnelling barrier height of about 2.5 eV. The conductance of Fe-SrF 2 in nanoscale (~ 500 nm 2 ) showed the Coulomb-staircase-like characteristics at room temperature. The staircase period approximately corresponded to the value estimated from the geometry observed by TEM.The feasibility of this method is briefly described.
“…Compared with our earlier work using a 40 nm thick Fe-SrF 2 (~ 37 vol% Fe) without the SrF 2 top layer [11], the current in this work is about one order smaller. This is thought to be due to the existence of the 1 nm thick SrF 2 top layer.…”
Section: Coulomb Staircase Of Fe-srf 2 Granular Filmcontrasting
confidence: 59%
“…With this in mind, combined TEM/STM experiments have been successfully performed to correlate the geometry and the electric properties of metallic nanowires [8][9][10] (TEM: transmission electron microscopy; even without the feedback control, the word STM is used in this report). A similar experiment was carried out on metal-insulator granular films composed of metallic nanoparticles dispersed in an insulator matrix, and a clear Coulomb blockade effect was confirmed at room temperature (RT) when the contact area was small [11].…”
Section: Introductionmentioning
confidence: 81%
“…The fundamental design is same as the designs of those developed for studies on metallic nanowires [10,12]. The holder is loaded with three mechanical micrometers for a coarse Au-tips movement (µm -mm) and a tube-type piezoactuator for a fine Au-tips movement (nm -µm) which is controlled by the piezo controller with the output voltage of ± 100 V. By using the stepping motor controller, a motor installed in this holder can be rotated, and one of the two Au-tips were selected for the experiment without breaking the vacuum [11]. The current between Au electrodes were measured by using the current-to-voltage converter and the STM measurement unit.…”
Conductance measurements of nanostructures with simultaneous transmission electron microscopy (TEM) were performed on thin insulating SrF 2 films (3 nm thick) and Fe-SrF 2 granular films (10 nm thick) deposited on tip-shaped Au electrodes. By using a movable counter electrode, nanoscale regions were selected for investigation. Systematic measurements taken during the deformation of the SrF 2 film by the counter electrode provided a tunnelling barrier height of about 2.5 eV. The conductance of Fe-SrF 2 in nanoscale (~ 500 nm 2 ) showed the Coulomb-staircase-like characteristics at room temperature. The staircase period approximately corresponded to the value estimated from the geometry observed by TEM.The feasibility of this method is briefly described.
“…16,24 The in-situ TEM observation system was composed of a custom-made TEM holder attached with a piezo actuator. [26][27][28][29] The TEM instrument we used was mainly a JEM-2010 microscope (200 kV, C s ¼ 0.5 mm, 10 À5 Pa) with a CCD video camera to record the TEM images. In the TEM holder, the wedge-shaped ReRAM sample described above and a tip-shaped counter electrode made of Pr-Ir working as a TE were placed.…”
Section: Methodsmentioning
confidence: 99%
“…One method is in-situ transmission electron microscopy (TEM), where electric measurements and geometric and crystallographic observations can be simultaneously performed. [26][27][28][29] have been investigated by in-situ TEM. The first one was PCMO which shows the bipolar switching.…”
We used thermal oxidization at various temperatures to prepare NiO/Pr-Ir for use in resistance random access memory (ReRAM) samples. In-situ transmission electron microscopy (TEM) was used to investigate the forming process of these ReRAM samples, where a needle-shaped top electrode of Pt-Ir was attached to the NiO/Pt-Ir ReRAM layer. The forming voltage initializing the NiO layer increased at an oxidization temperature of between 200 and 400 C. In this process, conductive bridges, which are thought to be conductive filaments of a ReRAM, appeared, and their sizes showed a correlation with the injection power. It was as small as about 300 nm 2 when the injection power was 10 À6 W. Energy dispersive X-ray spectroscopy was used to analyze the bridge, and it was experimentally confirmed that the oxygen content of the bridge was lower than that of the initial NiO layer. However, these bridges in the low resistance state did not show further ReRAM switching to the high resistance state inside of a TEM instrument. To check the reason of this result, we investigated samples outside of the TEM instrument, which had similar geometry to that of TEM specimens. They showed the ReRAM switching in air ambient but not in vacuum. Combining these results inside and outside of the TEM instrument, it can be concluded that the existence of oxygen around the conductive filament plays an important role. This supports the filament redox model on the ReRAM operation. V C 2013 American Institute of Physics.
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