In-situ composition development of Zn/In-doped Ga2O3 nanowire with ultrahigh responsivity and long-term stability for deep-UV photodetector

Synthesis of InAl-alloyed Ga2O3 nanowires for self-powered ultraviolet detectors by a CVD method

“…Fig. 2 The band gap width of the semiconductor material is calculated by the following equation: 39,43,44 (ahy…”

“…In order to improve the detection performance, people oen regulated the optical and electrical characteristics of Ga 2 O 3 by introducing doping elements and constructing heterojunctions. [33][34][35][36][37][38] For example, Zhu et al 39 reported a Schottky junction UV photodetector spun with MXene on Ga 2 O 3 nanowire, which is essentially MSM structured. Usman et al 40 reported a (In 0.26 Ga 0.74 ) 2 O 3 photodetector based on microwave irradiation assisted deposition technology, which is still a photoconductive device.…”