In situ characterization of SiO2 etching with second harmonic generation and ellipsometry

Priem, A.; Hasselt, C.W. van; Devillers, M.A.C.; Rasing, T.H.M.

doi:10.1016/0039-6028(95)01213-3

Cited by 4 publications

(1 citation statement)

References 30 publications

(28 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[11][12][13] Also the surface of clean and H terminated c-Si has been studied thoroughly with SHG. [14][15][16][17][18][19][20] In these studies the SHG signal from the c-Si surface has been shown to be sensitive to surface Si dangling bonds for photon energies in the range of ϳ1.0 to ϳ 1.3 eV.…”

Section: Introductionmentioning

confidence: 99%

Spectroscopic second-harmonic generation duringAr+-ion bombardment of Si(100)

et al. 2006

View full text Add to dashboard Cite

Spectroscopic and real time optical second-harmonic generation ͑SHG͒ has been applied to gain insight into the surface and interface processes during low-energy ͑70-1000 eV͒ Ar + -ion bombardment of H terminated Si͑100͒. The Ar + -ion bombardment of the crystalline silicon ͑c-Si͒, which creates a layer of amorphous silicon ͑a-Si͒, has been studied in the SH photon energy range of 2.7-3.5 eV. The time-resolved SHG signal has been observed to increase with an order of magnitude upon ion bombardment. Spectroscopic SHG during ion bombardment and after subsequent XeF 2 dosing indicates that the SHG signal has both a contribution generated at the buried interface between the a-Si and the c-Si and an additional contribution originating from the a-Si surface. By separating these contributions using a critical point model it has been shown that the SHG spectra consist of a sharp resonance at 3.36 eV with a linewidth of 0.1 eV at the buried a-Si/ c-Si interface and a much broader resonance at a resonance energy of 3.2 eV with a linewidth of 0.5 eV at the a-Si surface. The former resonance is identified to originate from E 0 Ј/E 1 transitions between bulk electronic states in the c-Si that are modified due to the vicinity of the interface, while the latter resonance is caused by transitions related to Si-Si bonds in the surface region of the a-Si. The time-resolved dynamics of the SHG signal can help in understanding the mechanism of ion-beam and plasma etching of silicon.

show abstract