In situ and ex situ examination of plasma-assisted nitriding of aluminium alloys

Quast, M.; Mayr, P.; Stock, H.‐R.; Podlesak, H.; Wielage, B.

doi:10.1016/s0257-8972(00)00992-0

Cited by 32 publications

(19 citation statements)

References 24 publications

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“…It has been pointed out that increase in argon content in nitrogen plasma plays a vital role in the growth behavior of nitrided films [17]. This is due to higher secondary electron emission of argon ions as compared to nitrogen ions [18]. However, energetic argon ions sputtered more target material as compared to nitrogen ions [18], which increases the discharge current [19].…”

Section: A Xrd Analysismentioning

confidence: 99%

“…This is due to higher secondary electron emission of argon ions as compared to nitrogen ions [18]. However, energetic argon ions sputtered more target material as compared to nitrogen ions [18], which increases the discharge current [19]. Thus variation in discharge current is associated with the argon content and their energies which in turn favor the growth of silicon nitride.…”

Section: A Xrd Analysismentioning

confidence: 99%

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Role of argon plasma on the structural and morphological properties of silicon nitride films by pulsed DC glow discharge

Abbas

Ahmad

Khan³

et al. 2013

2013 International Conference on Aerospace Science &Amp; Engineering (ICASE)

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The role of argon gas concentration on silicon nitride layer formation by using Pulsed dc glow discharge is investigated by exposing Si (100) to different N 2 /Ar plasma for 4 hrs at 2 mbar pressure and 175 W power. XRD results show the development of different planes of silicon nitride which confirms the formation of silicon nitride films. The peak broadening, overlapping and shifting from their stress free values are attributed to the argon nitrogen plasma concentrations. SEM results show the formation of nitride film. AFM images shows that silicon nitride films are rough in nature and their roughness is increased with argon. Maximum surface roughness is observed for 20% argon while minimum surface roughness is observed at 10% argon content in nitrogen-argon plasma.

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Section: A Xrd Analysismentioning

confidence: 99%

Section: A Xrd Analysismentioning

confidence: 99%

Role of argon plasma on the structural and morphological properties of silicon nitride films by pulsed DC glow discharge

Abbas

Ahmad

Khan³

et al. 2013

2013 International Conference on Aerospace Science &Amp; Engineering (ICASE)

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“…In addition to the traditional chemical and electrolytic processes, newer plasma aided surface engineering processes have attracted increasing attention, in particular to improving the hardness and wear resistance. [1][2][3][4][5][6] Recently, a new electron beam excited plasma (EBEP) source for nitriding was developed by Hara et al 7,8) In our previous work, 9) the results of residual stress and microstructure of nitrided AA5052 and AA5083 alloys layer formed by the new EBEP method were compared. The purpose of this study is mainly to clarify the microstructure of the nitrided AA5052 alloy.…”

Section: Introductionmentioning

confidence: 99%

Microstructure of Nitrided AA5052 Aluminum Alloy Formed by Electron Beam Excited Plasma Technique

et al. 2005

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The nitriding of the AA5052 aluminum alloy was carried out using an electron beam excited plasma (EBEP) technique. The specimen was characterized with respect to the following properties: crystallographic structure (X-ray powder diffraction) and the surface and cross sectional microstructures of the nitrided layer (AlN layer) observed by means of scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The AlN layer was uniformly formed on the AA5052 alloy with the thickness of around 4-5 mm. In the AlN layer, pillarshaped grains were formed perpendicular to the surface with different orientations. The average grain size near the interface between the substrate and the AlN layer was smaller than that near the surface of the AlN layer. On the surface of the AlN layer, the nitrogen concentration was high, and in the middle of the AlN layer, it had a constant concentration like aluminum, and the concentration decreased as it approached the interface. The magnesium concentrates at the interface due to the formation of MgAl 2 O 4 .

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“…However, at present this method does not find any large-scale industrial application for surface modification of metals due to its high cost and complicated equipment. More attractive are processes that use low-energy ions such as plasma nitriding [17][18][19][20][21] and plasma immersion ion implantation. [22][23][24] However, the low ion energies associated with these processes limit the depth of modification, so that diffusion at elevated temperature is applied to achieve layers with sufficient thickness.…”

Section: Introductionmentioning

confidence: 99%

AlN growth kinetics during ion nitriding of aluminum

Fitz

Möller

2002

Journal of Applied Physics

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In situ and ex situ examination of plasma-assisted nitriding of aluminium alloys

Cited by 32 publications

References 24 publications

Role of argon plasma on the structural and morphological properties of silicon nitride films by pulsed DC glow discharge

Role of argon plasma on the structural and morphological properties of silicon nitride films by pulsed DC glow discharge

Microstructure of Nitrided AA5052 Aluminum Alloy Formed by Electron Beam Excited Plasma Technique

AlN growth kinetics during ion nitriding of aluminum

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