In-rich molecular beam epitaxy of InAs on Sb-terminated GaAs(001) surface

Katkov, A. V.; Wang, C.C.; Chi, J.Y.

doi:10.1016/j.jcrysgro.2013.02.004

Cited by 2 publications

(1 citation statement)

References 33 publications

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“…A big number of experimental and theoretical contributions are devoted to the study of the GaAs(001) surface superstructural transitions properties. It is connected with the role they play in MBE processes [1][2][3][4][5][6]. Superstructural states affect the structural perfection of the obtained heterointerfaces, determining the characteristics of adsorption and desorption processes, and the diffusion of growth components on surface terraces, also the efficiency of their incorporation into a growing layer.…”

Section: Introductionmentioning

confidence: 99%

Kinetics of (2 × 4) → (3 × 1(6)) structural changes on GaAs(001) surfaces during the UHV annealing

Vasev¹,

Putyato²,

Preobrazhenskii³

2018

Surface Science

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The peculiarities of superstructural transition (2×4) (3×1(6)) on the GaAs(001) surface were studied by the RHEED method in the conditions initiated by a sharp change of the arsenic flux. The specular beam intensities RHEED picture dependences on time were obtained during the transition. The measurement results were analyzed within the JMAK (Johnson -Melh -Avrami -Kolmogorov) k i n e t i c m o d e l . I t w a s e s t a b l i s h e d t h a t t h e p r o c e s s o f s t r u c t u r a l rearrangement proceeds in two stages and it is realized through the state of intermediate disordering, domains with different reconstructions being coexistent on the surface. The activation energies and phase transition velocities were determined for each of the stages. The procedure for precise determination of GaAs(001) surface temperature using the features of the (2 4) DO transition process kinetic was proposed. The resul ts of this work all ow us to broaden our understanding of the reconstructi on transitions mechanisms. This information has a key (fundamental and applied) nature for the technologies of epitaxial growth of multilayer heterostructures, where the interface planarity and the sharpness of composition profile are of particular importance.

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Section: Introductionmentioning

confidence: 99%

Kinetics of (2 × 4) → (3 × 1(6)) structural changes on GaAs(001) surfaces during the UHV annealing

Vasev¹,

Putyato²,

Preobrazhenskii³

2018

Surface Science

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Study of the type-I to type-II band alignment transition in InAs(Sb)/GaAs quantum dot nanostructures

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In-rich molecular beam epitaxy of InAs on Sb-terminated GaAs(001) surface

Cited by 2 publications

References 33 publications

Kinetics of (2 × 4) → (3 × 1(6)) structural changes on GaAs(001) surfaces during the UHV annealing

Kinetics of (2 × 4) → (3 × 1(6)) structural changes on GaAs(001) surfaces during the UHV annealing

Study of the type-I to type-II band alignment transition in InAs(Sb)/GaAs quantum dot nanostructures

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In-rich molecular beam epitaxy of InAs on Sb-terminated GaAs(001) surface

Cited by 2 publications

References 33 publications

Kinetics of (2 × 4) → (3 × 1(6)) structural changes on GaAs(001) surfaces during the UHV annealing

Kinetics of (2 × 4) → (3 × 1(6)) structural changes on GaAs(001) surfaces during the UHV annealing

Study of the type-I to type-II band alignment transition in InAs(Sb)/GaAs quantum dot nanostructures

Contact Info

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Kinetics of (2 × 4) → (3 × 1(6)) structural changes on GaAs(001) surfaces during the UHV annealing

Kinetics of (2 × 4) → (3 × 1(6)) structural changes on GaAs(001) surfaces during the UHV annealing