2012
DOI: 10.1063/1.4733964
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In-plane mapping of buried InGaAs quantum rings and hybridization effects on the electronic structure

Abstract: Properties of As + -implanted and annealed GaAs and InGaAs quantum wells: Structural and band-structure modifications J. Appl. Phys. 95, 1122 (2004); 10.1063/1.1637956 Effects of tensile strain in barrier on optical gain spectra of GaInNAs/GaAsN quantum wells J. Appl. Phys. 93, 5836 (2003); 10.1063/1.1566469 Investigation of short wavelength intersubband transitions in InGaAs/AlAs quantum wells on GaAs substrate

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Cited by 13 publications
(8 citation statements)
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“…The lateral size of the QRs, as described in Ref. [23], compared to the QDs, will also lead to a shrinkage of the emission energy.…”
Section: Structural Characterizationmentioning
confidence: 99%
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“…The lateral size of the QRs, as described in Ref. [23], compared to the QDs, will also lead to a shrinkage of the emission energy.…”
Section: Structural Characterizationmentioning
confidence: 99%
“…The in-plane potential profile used for both the QD and QR shape simulations is given by [23] as illustrated in Fig. 4(a).…”
Section: Electronic Structurementioning
confidence: 99%
See 2 more Smart Citations
“…4(c) and a relaxed is the bulk lattice parameter obtained from Vegard's law for the given EuTe/SnTe concentration of Fig 4(d). Although these maps do not provide the three-dimensional composition profile of EuTe dots, they can be used to infer information about electronic properties of our nanostructures as well as quantum confinement in similar QDs [24].…”
Section: Eute Islands On Sntementioning
confidence: 99%